SI9953DY-T1 Vishay, SI9953DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI9953DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9953DY-T1

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2.3A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

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4
Si9953DY
Vishay Siliconix
0.01
0.1
–0.2
–0.4
20
10
2
1
0.8
0.6
0.4
0.2
0.0
10
1
0.2
–50
–4
Duty Cycle = 0.5
0.02
0.05
0.1
Source-Drain Diode Forward Voltage
I
0.2
–25
D
0.4
= 250 A
V
T
SD
J
= 150 C
0
0.6
– Source-to-Drain Voltage (V)
Threshold Voltage
T
J
– Temperature ( C)
25
0.8
10
–3
50
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
1.0
75
T
J
= 25 C
1.2
100
125
1.4
10
–2
Square Wave Pulse Duration (sec)
150
1.6
10
–1
30
25
20
15
10
1.0
0.8
0.6
0.4
0.2
5
0
0.010
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 2.3 A
V
2
GS
1
Single Pulse Power
0.100
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
– Gate-to-Source Voltage (V)
P
DM
JM
– T
4
t
1
A
= P
t
2
DM
Z
thJA
S-00652—Rev. K, 27-Mar-00
1
thJA
6
t
t
Document Number: 70138
1
2
(t)
= 62.5 C/W
10
8
10
30
10
30