SI4833DY Vishay, SI4833DY Datasheet

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SI4833DY

Manufacturer Part Number
SI4833DY
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI4833DY

Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.085Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
3.5A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4833DY
Manufacturer:
MAXIM
Quantity:
241
Part Number:
SI4833DY-T1
Manufacturer:
SILICONIX
Quantity:
20 000
Part Number:
SI4833DY-T1-E3
Manufacturer:
VISHAY
Quantity:
42 500
Part Number:
SI4833DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4833DY-T1-E3
Quantity:
2 500
Notes
a.
b.
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient (t
Maximum Junction-to-Ambient (t
Maximum Junction-to-Ambient (t = steady state)
Maximum Junction-to-Ambient (t = steady state)
V
V
Surface Mounted on FR4 Board.
t
DS
KA
–30
–30
30
10 sec.
(V)
(V)
P-Channel 30-V (D-S) MOSFET with Schottky Diode
Diode Forward Voltage
G
S
A
A
0.180 @ V
0.085 @ V
1
2
3
4
Parameter
0.5 V @ 1.0 A
r
J
J
DS(on)
= 150 C) (MOSFET)
= 150 C) (MOSFET)
V
F
GS
Top View
GS
(V)
SO-8
10 sec)
10 sec)
Parameter
( )
= –4.5 V
= –10 V
a, b
a, b
a, b
a, b
a
a
a
a
8
7
6
5
a, b
a, b
K
K
D
D
a, b
I
I
D
F
1.4
2.5
(A)
(A)
3.5
T
T
T
T
T
T
Device
MOSFET
MOSFET
Schottky
Schottky
A
A
A
A
A
A
= 25 C
= 70 C
= 25 C
= 70 C
= 25 C
= 70 C
G
Symbol
Symbol
T
R
R
R
J
V
V
V
I
I
P
P
P
S
D
DM
, T
I
I
I
FM
thJA
thJA
I
DS
KA
GS
D
D
S
F
D
D
stg
Typical
90
92
www.vishay.com FaxBack 408-970-5600
–55 to 150
Limit
– 1.7
–30
Vishay Siliconix
1.4
1.3
1.9
1.2
30
30
2
3.5
2.8
20
20
Maximum
62.5
65
K
A
Si4833DY
Unit
Unit
C/W
C/W
C/W
W
W
W
V
V
A
A
A
A
C
2-1

Related parts for SI4833DY

SI4833DY Summary of contents

Page 1

... S-56941—Rev. B, 02-Nov-98 I (A) D 3.5 2.5 I ( Symbol stg Device Symbol MOSFET Schottky thJA thJA MOSFET Schottky Si4833DY Vishay Siliconix K A Limit Unit – 3.5 2 – 1 1.9 1.2 –55 to 150 C Typical Maximum Unit 62.5 65 C/W C/W C www.vishay.com FaxBack 408-970-5600 2-1 ...

Page 2

... Si4833DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... S-56941—Rev. B, 02-Nov- 700 600 500 400 300 200 100 On-Resistance vs. Junction Temperature 2.0 1 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 –25 Si4833DY Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( 2 100 ...

Page 4

... Si4833DY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A D 0.6 0.4 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 ...

Page 5

... Document Number: 70796 S-56941—Rev. B, 02-Nov- 0.1 0.01 125 150 0 Capacitance – Reverse Voltage (V) KA –2 – Square Wave Pulse Duration (sec) Si4833DY Vishay Siliconix Forward Voltage Drop T = 150 0.1 0.2 0.3 0.4 0.5 0.6 V – Forward Voltage Drop ( Notes ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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