SI4431ADY-T1 Vishay, SI4431ADY-T1 Datasheet
SI4431ADY-T1
Specifications of SI4431ADY-T1
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SI4431ADY-T1 Summary of contents
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... GS –30 –30 0.052 @ V = –4 SO Top View Ordering Information: Si4431ADY-T1 Si4431ADY-T1—E3 (Lead (Pb)-free) Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...
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... Si4431ADY Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... V – Source-to-Drain Voltage (V) SD Document Number: 71803 S-51472—Rev. D, 01-Aug-05 _ 2000 1600 1200 25_C J 0.8 1.0 1.2 Si4431ADY Vishay Siliconix Capacitance C iss 800 C oss 400 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 7 1.4 1.2 1 ...
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... Si4431ADY Vishay Siliconix Threshold Voltage 0.6 0.4 = 250 0.2 0.0 –0.2 –0.4 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...