SI9933ADY-T1 Vishay, SI9933ADY-T1 Datasheet

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SI9933ADY-T1

Manufacturer Part Number
SI9933ADY-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI9933ADY-T1

Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.075Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
3.4A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant

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Quantity
Price
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Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70651
S-00652—Rev. B, 27-Mar-00
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t
DS
–20
20
(V)
G
G
S
S
1
1
2
2
J
J
0.075 @ V
0.105 @ V
a
a
0.115 @ V
1
2
3
4
= 150 C)
= 150 C)
a
r
DS(on)
Top View
Dual P-Channel 20-V (D-S) MOSFET
SO-8
Parameter
Parameter
GS
GS
GS
a
a
10 sec.
( )
= –4.5 V
= –3.0 V
= –2.7 V
a
8
7
6
5
D
D
D
D
1
1
2
2
I
D
(A)
3.4
2.9
2.6
T
T
T
T
A
A
A
A
= 25 C
= 70 C
= 25 C
= 70 C
G
1
P-Channel MOSFET
D
Symbol
Symbol
1
S
T
R
V
J
1
V
I
P
P
, T
D
DM
I
I
I
thJA
DS
GS
D
D
S
D
D
1
stg
www.vishay.com FaxBack 408-970-5600
G
2
P-Channel MOSFET
–55 to 150
Vishay Siliconix
Limit
Limit
–2.0
–20
62.5
2.0
1.3
3.4
2.7
12
16
D
Si9933ADY
2
S
2
D
2
Unit
Unit
C/W
W
W
V
V
A
A
A
C
1

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SI9933ADY-T1 Summary of contents

Page 1

... For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70651 S-00652—Rev. B, 27-Mar-00 I (A) D 3.4 2.9 2 P-Channel MOSFET Symbol Symbol R thJA Si9933ADY Vishay Siliconix P-Channel MOSFET Limit Unit – 3.4 2 –2.0 2 1.3 –55 to 150 C stg Limit Unit 62.5 C/W www.vishay.com FaxBack 408-970-5600 1 ...

Page 2

... Si9933ADY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage V GS(th) Gate-Body Leakage I GSS Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current I I DSS DSS b b On-State Drain Current On-State Drain Current I I D(on) D(on Drain-Source On-State Resistance DS(on) b Forward Transconductance ...

Page 3

... S-00652—Rev. B, 27-Mar- 2 2000 1500 1000 500 2.0 1.6 1.2 0.8 0 –50 Si9933ADY Vishay Siliconix Transfer Characteristics T = – 125 C 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si9933ADY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 1.0 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 A D 0.4 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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