MTDF1P02HDR2 ON Semiconductor, MTDF1P02HDR2 Datasheet - Page 3

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MTDF1P02HDR2

Manufacturer Part Number
MTDF1P02HDR2
Description
Manufacturer
ON Semiconductor
Datasheet

Specifications of MTDF1P02HDR2

Number Of Elements
2
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTDF1P02HDR2
Manufacturer:
BCD
Quantity:
50 000
2. Pulse Test: Pulse Width
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2.)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 3.)
SOURCE–DRAIN DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS =
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Forward Transconductance (V DS = 10 Vdc, I D = 0.6 Adc)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Storage Charge
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 125 C)
(V DS = V GS , I D = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(V GS = 4.5 Vdc, I D = 1.6 Adc)
(V GS = 2.7 Vdc, I D = 0.8 Adc)
C pk =
300 s, Duty Cycle
Characteristic
Max limit – Typ
3 x SIGMA
(I S = 1.2 Adc, V GS = 0 Vdc) (Note 2.)
V GS = 4.5 Vdc, R G = 6 ) (Note 2.)
V GS = 2.7 Vdc, R G = 6 ) (Note 2.)
8.0 Vdc, V DS = 0 Vdc)
(V
(V DS = 15 Vdc, V GS = 0 Vdc,
(T C = 25 C unless otherwise noted)
(V DS = 10 Vdc, I D = 1.2 Adc,
(V DS
(V DD = 10 Vdc, I D = 0.6 Adc,
(V DD
(V DS = 16 Vdc, I D = 1.2 Adc,
(V DS
(I S = 1.2 Adc, V GS = 0 Vdc,
(I
(I S = 1.2 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ s) (Note 2.)
dI S /dt = 100 A/ s) (Note 2.)
(Cpk
(Cpk
(Cpk
V GS = 4.5 Vdc) (Note 2.)
1 2 Ad V
15 Vd V
2%.
10 Vdc, I D
10 Vdc, I D
16 Vdc, I D
f = 1.0 MHz)
f = 1.0 MHz)
T J = 125 C)
2.0)
2.0)
2.0)
http://onsemi.com
MTDF1P02HD
(Notes 2. & 4.)
(Notes 2. & 4.)
(Notes 2. & 4.)
1.2 Adc,
1.2 Adc,
0.6 Adc,
0 Vd
0 Vd
(Note 2.)
3
V (BR)DSS
R DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C rss
V SD
g FS
C iss
Q T
Q 1
Q 2
Q 3
t rr
t a
t b
t r
t r
t f
t f
Min
0.7
1.3
20
0.115
0.95
0.89
0.72
Typ
146
220
225
150
2.2
2.0
5.3
0.7
2.6
1.9
14
60
15
27
60
72
20
94
49
76
86
27
59
Max
100
175
280
1.0
1.4
7.5
1.1
10
mV/ C
mV/ C
Mhos
nAdc
Unit
Vdc
Vdc
Vdc
m
nC
Adc
pF
ns
ns
ns
C

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