HAT2022R-EL Renesas Electronics America, HAT2022R-EL Datasheet - Page 6

• Manufacturer Part Number: HAT2022R-EL
• Manufacturer: Renesas Electronics America
• Type: Power MOSFETr

Specifications of HAT2022R-EL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.015Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 11A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

HAT2022R
Rev.12.00 Sep 07, 2005 page 4 of 6
0.05
0.04
0.03
0.02
0.01
500
200
100
Static Drain to Source on State Resistance
50
20
10
50
40
30
20
10
0
–40
5
0
0.2
0
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
V
Dynamic Input Characteristics
= 11 A
DS
Body-Drain Diode Reverse
V
Gate Charge
0.5
20
0
DD
V
10 V
GS
vs. Temperature
= 5 V
10 V
25 V
Recovery Time
= 4 V
1
V
40
40
DD
di / dt = 20 A / µs
V
I
= 25 V
D
2 A, 5 A, 10 A
2
GS
10 V
= 2 A, 5 A, 10 A
5 V
V
80
60
= 0, Ta = 25°C
GS
Qg (nc)
Tc
5
DR
120
80
(°C)
10
(A)
100
160
20
20
16
12
8
4
0
10000
1000
3000
1000
500
200
100
100
300
0.5
50
20
10
50
20
10
30
10
5
2
1
0.2
0.2
0
Drain to Source Voltage V
V
PW = 3 µs, duty ≤ 1 %
Forward Transfer Admittance vs.
GS
Switching Characteristics
= 4 V, V
0.5
0.5
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
25°C
Drain Current
1
Tc = –25°C
1
DD
20
= 10 V
Coss
75°C
Ciss
Crss
2
2
t r
t f
t d(on)
30
I
D
D
V
Pulse Test
t d(off)
5
5
DS
V
f = 1 MHz
(A)
(A)
GS
= 10 V
40
DS
10
10
= 0
(V)
20
20
50