SI4410DY-T1 Vishay, SI4410DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4410DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4410DY-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0135Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 10A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 71726
S-40838—Rev. L, 03-May-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 10 A
V
On-Resistance vs. Drain Current
= 15 V
DS
10
2
8
Q
- Drain-to-Source Voltage (V)
V
Output Characteristics
g
GS
I
D
V
- Total Gate Charge (nC)
= 10 V thru 4 V
GS
- Drain Current (A)
Gate Charge
20
16
4
= 4.5 V
30
24
6
V
GS
= 10 V
3 V
40
32
8
10
50
40
3000
2500
2000
1500
1000
500
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
C
= 10 A
- 25
rss
= 10 V
V
1
6
DS
Transfer Characteristics
0
V
C
C
GS
- Drain-to-Source Voltage (V)
T
oss
iss
J
T
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
C
25
Capacitance
12
= 125_C
2
Vishay Siliconix
50
18
3
75
Si4410DY
- 55_C
100
25_C
24
www.vishay.com
4
125
150
30
5
3