NE32584C-T1A CALIFORNIA EASTERN LABS, NE32584C-T1A Datasheet

NE32584C-T1A

Manufacturer Part Number

NE32584C-T1A

Description

Manufacturer

CALIFORNIA EASTERN LABS

Datasheet

1.NE32584C-T1A.pdf (6 pages)

Specifications of NE32584C-T1A

Configuration

Single Dual Source

Gate-source Voltage (max)

Pin Count

Drain-source Volt (max)

Operating Temperature (min)

-65C

Operating Temperature (max)

150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Continuous Drain Current

90mA

Package Type

Case 84C

Lead Free Status / Rohs Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NE32584C-T1A

Manufacturer:

SYNERGY

Quantity:

5 000

Current page: 1 of 6
Download datasheet (55Kb)

FEATURES

• VERY LOW NOISE FIGURE:

• HIGH ASSOCIATED GAIN:

• L

• LOW COST METAL CERAMIC PACKAGE

• TAPE & REEL PACKAGING OPTION AVAILABLE

DESCRIPTION

The NE32584C is a pseudomorphic Hetero-Junction FET that

uses the junction between Si-doped AlGaAs and undoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling capabilities. The

mushroom gate also results in lower noise figure and high

associated gain. This device is housed in an epoxy-sealed,

metal/ceramic package and is intended for high volume con-

sumer and industrial applications.

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

ELECTRICAL CHARACTERISTICS

SYMBOLS

0.45 dB Typical at 12 GHz

12.5 dB Typical at 12 GHz

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not each specimen.

TH (CH-C)

TH (CH-A)

GSO

DSS

0.20 m, W

Optimum Noise Figure, V

Associated Gain, V

Saturated Drain Current, V

Pinch-off Voltage, V

Transconductance, V

Gate to Source Leakage Current, V

Thermal Resistance (Channel to Ambient)

Thermal Resistance (Channel to Case)

= 200 m

PARAMETERS AND CONDITIONS

PACKAGE OUTLINE

= 2 V, I

PART NUMBER

= 2 V, I

= 2 V,V

PSEUDOMORPHIC HJ FET

= 10 mA, f = 12 GHz

= 100 A

= 10 mA

= -3 V

= 10 mA, f = 12 GHz

= 0 V

= 25 C)

ULTRA LOW NOISE

UNITS

0.6

0.4

0.2

1.2

1.0

0.8

C/W

California Eastern Laboratories

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

Frequency, f (GHz)

11.0

MIN

-2.0

= 2 V, I

NE32584C

= 10 mA

NE32584C

84C

TYP

0.45

12.5

-0.7

750

0.5

MAX

0.55

10.0

-0.2

350

Related parts for NE32584C-T1A

NE32584C-T1A Summary of contents

Page 1

... LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION The NE32584C is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS I Drain Current DS I Gate Current GRF T Channel Temperature CH T Storage Temperature STG P Total Power Dissipation T Note: 1. ...

Page 3

... TYPICAL COMMON SOURCE SCATTERING PARAMETERS GHz 20 GHz 100 NE32584C FREQUENCY S 11 (GHz) MAG ANG 0.100 1.001 -1.75 0.200 1.001 -3.60 0.500 0.998 -8.95 1.000 0.989 -17.72 2.000 0.967 -34.63 3.000 0.943 -50.81 4.000 0.907 -66.71 5.000 0.857 -81.86 6.000 0.800 -96.39 7 ...

Page 4

... TYPICAL COMMON SOURCE SCATTERING PARAMETERS GHz 100 GHz - NE32584C FREQUENCY S 11 (GHz) MAG ANG 0.100 1.001 -1.81 0.200 1.000 -3.77 0.500 0.997 -9.43 1.000 0.987 -18.65 2.000 0.958 -36.35 3.000 0.925 -53.13 4.000 0.879 -69.42 5.000 0.821 -84.79 6.000 0.757 -99.35 7 ...

Page 5

... NE32584C NONLINEAR MODEL SCHEMATIC RG_PKG LG_PKG GATE 0.28nH 0.5 ohms CSG_PKG 0.01pF FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.6723 RG VTOSC 0 RD ALPHA 4 RS BETA 0.115 RGMET GAMMA 0.08 KF GAMMADC 0. TNOM DELTA 0.5 XTI VBI 0.715 EG IS 3e-13 VTOTC N 1.22 BETATCE ...

Page 6

... PART NUMBER NE32584C-S NE32584C-T1 EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 0 ...

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