CY7C1024AV33-12BGI Cypress Semiconductor Corp, CY7C1024AV33-12BGI Datasheet

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CY7C1024AV33-12BGI

Manufacturer Part Number
CY7C1024AV33-12BGI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1024AV33-12BGI

Density
3Mb
Access Time (max)
12ns
Operating Supply Voltage (typ)
3.3V
Package Type
BGA
Operating Temp Range
-40C to 85C
Supply Current
250mA
Operating Supply Voltage (min)
2.97V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
119
Word Size
24b
Lead Free Status / Rohs Status
Not Compliant
Cypress Semiconductor Corporation
Document #: 38-05149 Rev. *B
Features
Functional Description
The CY7C1024AV33 is a high-performance CMOS static RAM
organized as 131,072 words by 24 bits. Easy memory expan-
sion is provided by an active LOW CE1, CE3, active HIGH
CE2, an active LOW Output Enable (OE), and three-state driv-
ers. This device has an automatic power-down feature that
significantly reduces power consumption when deselected.
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Note:
• High speed
• CMOS for optimum speed/power
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE1, CE2, CE3 and OE
1.
Functional Block Diagram
options
— t
For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
AA
= 10 ns
A
V
V
A
16
CC
SS
0
[1]
3901 North First Street
MEMORY ARRAY
DECODER
COLUMN
128K X 24
7C1024AV33-10
275
10
15
Writing to the device is accomplished by taking Chip Enable
(CE1, CE2, CE3) active and Write Enable (WE) inputs LOW.
Data on the 24 I/O pins (I/O
the location specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE1, CE2, CE3) active and Output Enable (OE) LOW
while forcing Write Enable (WE) HIGH. Under these condi-
tions, the contents of the memory location specified by the
address pins will appear on the I/O pins.
The 24 input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE1, CE3 LOW, CE2 HIGH, and WE LOW).
The CY7C1024AV33 is available in a standard 119-ball BGA
package and a 100-pin TQFP package.
San Jose
7C1024AV33-12
CONTROL
128K x 24 Static RAM
250
12
15
,
CA 95134
0
through I/O
0
through I/O
Revised November 13, 2002
CY7C1024AV33
DQ
DQ
CE#
CE1#
CE2
OE#
WE#
0
23
23
7C1024AV33-15
) is then written into
23
0
) are placed in a
through A
225
408-943-2600
15
15
16
).

Related parts for CY7C1024AV33-12BGI

CY7C1024AV33-12BGI Summary of contents

Page 1

... The 24 input/output pins (I/O high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE1, CE3 LOW, CE2 HIGH, and WE LOW). The CY7C1024AV33 is available in a standard 119-ball BGA package and a 100-pin TQFP package. MEMORY ARRAY 128K X 24 ...

Page 2

... Pin Configurations Document #: 38-05149 Rev. *B 119 BGA Top View CE1 A NC CE2 NC CE3 CY7C1024AV33 Page ...

Page 3

... Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage............................................ >2001V (per MIL-STD-883, Method 3015) Latch-Up Current..................................................... >200 mA Operating Range [2] .... –0.5V to +7.0V Range Commercial + 0.5V CC Industrial + 0.5V CC CY7C1024AV33 NC 80 VCC 79 VSS 78 77 DQ0 76 DQ1 VSS 75 VCC 74 DQ2 73 DQ3 72 VSS 71 70 VCC 69 DQ4 DQ5 ...

Page 4

... CC V > V – 0.3V < 0.3V Test Conditions MHz 3. 480 3.3V R2 GND 5 pF 255 INCLUDING JIG AND SCOPE (b) 1.73V CY7C1024AV33 1024AV33-12 1024AV33-15 Min. Max. Min. 2.4 2.4 0.4 2 0.3 –0.3 0.8 –0.3 –3 +3 –3 –5 +5 –5 250 60 15 Max. ...

Page 5

... The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of t Document #: 38-05149 Rev. *B 7C1024AV33-10 7C1024AV33-12 Min. Max. Min less than less than t , and t HZCE LZCE HZOE LZOE HZWE CY7C1024AV33 7C1024AV33-15 Max. Min. Max less than t for any given device. HZWE LZWE and Page Unit ...

Page 6

... Address valid prior to or coincident with CE transition LOW. 13. Data I/O is high impedance 14 goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05149 Rev OHA t RC ACE t DOE LZOE 50 SCE PWE t DATA VALID . IL CY7C1024AV33 DATA VALID t HZOE t HZCE DATA VALID t PD 50% SCE HIGH IMPEDANCE Page ...

Page 7

... Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS NOTE 15 DATA I/O t Note: 15. During this period the I/Os are in the output state and input signals should not be applied. Document #: 38-05149 Rev. *B [13, 14 SCE PWE t SD DATA [3, 14 SCE PWE HZWE CY7C1024AV33 VALID DATA VALID t LZWE Page ...

Page 8

... Ordering Information Speed (ns) Ordering Code 10 CY7C1024AV33-10AC CY7C1024AV33-10BGC 12 CY7C1024AV33-12AC CY7C1024AV33-12BGC CY7C1024AV33-12BGI 15 CY7C1024AV33-15AC CY7C1024AV33-15BGC CY7C1024AV33-15BGI Document #: 38-05149 Rev I/O –I High Z Power-Down X High Z Power-Down X High Z Power-Down H Data Out Read L Data In Write H High Z Selected, Outputs Disabled Package Name Package Type A101 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) ...

Page 9

... Package Diagrams 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05149 Rev. *B CY7C1024AV33 51-85050-*A Page ...

Page 10

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 119-Lead PBGA ( 2.4 mm) BG119 CY7C1024AV33 51-85115-*B Page ...

Page 11

... Document History Page Document Title: CY7C1024AV33 128K x 24 Static RAM Document Number: 38-05149 Issue REV. ECN NO. Date ** 109893 09/22/01 *A 116473 09/16/02 *B 121472 11/14/02 Document #: 38-05149 Rev. *B Orig. of Change Description of Change SZV Change from Spec number: 38-00983 to 38-05149 CEA Add applications foot note to data sheet, page 1. ...

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