CY7C1020CV33-15ZI Cypress Semiconductor Corp, CY7C1020CV33-15ZI Datasheet - Page 3

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CY7C1020CV33-15ZI

Manufacturer Part Number
CY7C1020CV33-15ZI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1020CV33-15ZI

Density
512Kb
Access Time (max)
15ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP
Operating Temp Range
-40C to 85C
Supply Current
80mA
Operating Supply Voltage (min)
2.97V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Lead Free Status / Rohs Status
Not Compliant
Document #: 38-05133 Rev. *B
AC Test Loads and Waveforms
Switching Characteristics
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
Notes:
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
BW
4.
5.
6.
7.
8.
Parameter
[7]
[7]
Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
At any given temperature and voltage condition, t
t
This parameter is guaranteed by design and is not tested.
The internal Write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a Write,
and the transition of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write.
HZOE
OUTPUT
, t
HZBE
3.3V
[8]
, t
HZCE
30 pF
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
OE HIGH to High-Z
CE LOW to Low-Z
CE HIGH to High-Z
CE LOW to Power-up
CE HIGH to Power-down
Byte Enable to Data Valid
Byte Enable to Low-Z
Byte Disable to High-Z
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE HIGH to Low-Z
WE LOW to High-Z
Byte Enable to End of Write
, and t
HZWE
R 317
(a)
are specified with a load capacitance of 5 pF as in part (c) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
Description
Over the Operating Range
351
[5]
[5]
R2
[5, 6]
[5]
[5, 6]
[5, 6]
GND
3.0V
Rise Time: 1 V/ns
[4]
HZCE
is less than t
10%
LZCE
90%
, t
HZOE
[4]
ALL INPUT PULSES
Min.
1020CV33-10
10
10
3
0
3
0
0
8
7
0
0
7
5
0
3
7
is less than t
(b)
Max.
10
10
10
LZOE
5
5
5
5
5
5
, and t
High-Z characteristics:
Fall Time: 1 V/ns
90%
HZWE
Min.
1020CV33-12
12
12
10%
3
0
3
0
0
9
8
0
0
8
6
0
3
8
OUTPUT
is less than t
3.3V
Max.
12
12
12
6
6
6
6
6
6
(c)
LZWE
5 pF
for any given device.
CY7C1020CV33
Min.
1020CV33-15
15
15
10
10
10
3
0
3
0
0
0
0
8
0
3
9
R 317
Max.
15
15
15
351
7
7
7
7
7
7
R2
Page 3 of 8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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