CY62157DV20L-55BVI Cypress Semiconductor Corp, CY62157DV20L-55BVI Datasheet

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CY62157DV20L-55BVI

Manufacturer Part Number
CY62157DV20L-55BVI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62157DV20L-55BVI

Lead Free Status / Rohs Status
Not Compliant
Cypress Semiconductor Corporation
Document #: 38-05136 Rev. *B
Features
Functional Description
The CY62157DV20 is a high-performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 99% when addresses are not
toggling. The device can also be put into standby mode when
Logic Block Diagram
Note:
1.
• Very high speed: 55 ns
• Wide voltage range: 1.65V to 2.2V
• Pin compatible with CY62157CV18
• Ultra low active power
• Ultra low standby power
• Easy memory expansion with CE
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA
— Typical active current: 1 mA @ f = 1 MHz
— Typical active current: 10 mA @ f = fmax
For best practice recommendations, please refer to the Cypress application note System Design Guidelines on http://www.cypress.com.
A
A
A
A
A
A
A
A
A
A
A
10
9
8
7
6
5
4
3
2
1
0
[1]
Power - down
COLUMN DECODER
Circuit
DATA IN DRIVERS
1
2048 x 256 x 16
, CE
RAM ARRAY
512K x 16
2
and OE features
3901 North First Street
(MoBL ) in
deselected Chip Enable 1 (CE
LOW or both BHE and BLE are HIGH. The input/output pins
(I/O
when: deselected Chip Enable 1 (CE
2 (CE
Enable and Byte Low Enable are disabled (BHE, BLE HIGH)
or during a write operation (Chip Enable 1 (CE
Chip Enable 2 (CE
Writing to the device is accomplished by taking Chip Enable 1
(CE
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O
specified on the address pins (A
Enable (BHE) is LOW, then data from I/O pins (I/O
I/O
(A
Reading from the device is accomplished by taking Chip
Enable 1 (CE
Output Enable (OE) LOW while forcing the Write Enable (WE)
HIGH. If Byte Low Enable (BLE) is LOW, then data from the
memory location specified by the address pins will appear on
I/O
memory will appear on I/O
back of this data sheet for a complete description of read and
write modes.
BHE
BLE
0
15
0
0
1
through A
to I/O
) LOW and Chip Enable 2 (CE
) is written into the location specified on the address pins
2
through I/O
) LOW, outputs are disabled (OE HIGH), both Byte High
8M (512K x 16) Static RAM
7
. If Byte High Enable (BHE) is LOW, then data from
San Jose
18
1
) LOW and Chip Enable 2 (CE
).
I/O
I/O
15
0
0
8
2
) are placed in a high-impedance state
–I/O
–I/O
) HIGH and WE LOW).
through I/O
BHE
WE
OE
BLE
7
15
8
to I/O
CA 95134
1
) HIGH or Chip Enable 2 (CE
CE
7
), is written into the location
CE
0
15
2
through A
2
. See the truth table at the
1
CY62157DV20
) HIGH and Write Enable
Revised March 17, 2003
1
) HIGH or Chip Enable
CE
CE
2
1
18
MoBL2
408-943-2600
). If Byte High
2
1
) HIGH and
) LOW and
8
through
2
)

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CY62157DV20L-55BVI Summary of contents

Page 1

... Circuit Note: 1. For best practice recommendations, please refer to the Cypress application note System Design Guidelines on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05136 Rev (512K x 16) Static RAM deselected Chip Enable 1 (CE LOW or both BHE and BLE are HIGH. The input/output pins ...

Page 2

Pin Configuration Notes pins are not connected to the die. 3. DNU pins are to be connected left open. SS Document #: 38-05136 Rev. *B FBG A Top View ...

Page 3

... Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential . 0. Voltage Applied to Outputs Product Portfolio V Range(V) CC Product Min. Typ. CY62157DV20L 1.65 1.8 CY62157DV20LL 1.65 1.8 DC Electrical Characteristics Parameter Description V Output HIGH Voltage Output LOW Voltage ...

Page 4

Thermal Resistance Parameter Description Thermal Resistance (Junction to JA [6] Ambient) Thermal Resistance (Junction to JC [6] Case) AC Test Loads and Waveforms OUTPUT 30 pF INCLUDING JIG AND SCOPE Equivalent to: OUTPUT Parameters ...

Page 5

Switching Characteristics (Over the Operating Range) Parameter Description Read Cycle t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW or CE HIGH to Data Valid ACE 1 2 ...

Page 6

Switching Waveforms (continued) [15, 16] Read Cycle No. 2 (OE Controlled) ADDRESS BLE t LZBE OE HIGH IMPEDANCE DAT A OUT t LZCE SUPPLY C URRENT ...

Page 7

Switching Waveforms (continued) Write Cycle No Controlled ADDR HE DAT AI/O DON’T CARE t Write Cycle No. 3 (WE Controlled, OE LOW) ...

Page 8

... Switching Waveforms (continued) Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDR ESS /BLE DATA I/O DON’T CARE Ordering Information Speed (ns) Ordering Code 55 CY62157DV20L-55BVI 55 CY62157DV20LL-55BVI 70 CY62157DV20L-70BVI CY62157DV20LL-70BVI Document #: 38-05136 Rev. *B [19 SCE PWE t SD VALID DATA IN Package Name Package Type BV48A 48-ball Fine Pitch BGA ( mm) ...

Page 9

... Document #: 38-05136 Rev. *B © Cypress Semiconductor Corporation, 2003. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

Page 10

Document History Page Document Title: CY62157DV20 MoBL2 Document Number: 38-05136 Issue REV. ECN NO. Date ** 115250 05/29/02 *A 124693 03/18/03 *B 124693 03/19/03 Document #: 38-05136 Rev. *B 512K x 16 Static RAM Orig. of Change Description of Change ...

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