CY62147DV18LL-70BVI Cypress Semiconductor Corp, CY62147DV18LL-70BVI Datasheet
CY62147DV18LL-70BVI
Specifications of CY62147DV18LL-70BVI
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CY62147DV18LL-70BVI Summary of contents
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... Circuit Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05343 Rev. *B 4-Mb (256K x 16) Static RAM mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The ...
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Pin Configuration Notes pins are not internally connected on the die. 3. DNU pins have to be left floating or tied to Vss to ensure proper application. 4. Pins H1, G2, and H6 in the ...
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... Document #: 38-05343 Rev. *B Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... > 200 mA Operating Range Device + 0.2V CC(MAX) CY62147DV18L Industrial –40°C to +85°C 1.65V to 2.25V + 0.2V CY62147DV18LL CC(MAX) + 0.2V CC (MAX) Operating 1MHz Speed [7] Max. (ns) Typ. ...
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Electrical Characteristics Over the Operating Range Parameter Description −0.2V, I Automatic CE CE > V SB1 CC Power-Down V >V –0.2V Current — V <0.2V CMOS Inputs (Address and Data Only ...
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Data Retention Waveform wqewqewq BHE.BLE Switching Characteristics Over the Operating Range Parameter Description Read Cycle t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE ...
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Switching Waveforms Read Cycle 1 (Address Transition Controlled) ADDRESS DATA OUT PREVIOUS DATA VALID [15, 16] Read Cycle No. 2 (OE Controlled) ADDRESS CE t ACE OE BHE/BLE t LZOE t DBE t LZBE HIGH IMPEDANCE DATA OUT t LZCE ...
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Switching Waveforms (continued) [13, 17, 18] Write Cycle No. 1 (WE Controlled) ADDRESS BHE/BLE OE 19 DATA I/O NOTE t HZOE [13, 17, 18] Write Cycle No. 2 (CE Controlled) ADDRESS CE WE BHE/BLE OE DATA ...
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Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS CE BHE/BLE NOTE 19 DATAI/O t Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 19 Document ...
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... Ordering Information Speed (ns) Ordering Code 55 CY62147DV18L-55BVI CY62147DV18LL-55BVI 70 CY62147DV18L-70BVI CY62147DV18LL-70BVI 55 CY62147DV18L-55BVXI CY62147DV18LL-55BVXI 70 CY62147DV18L-70BVXI CY62147DV18LL-70BVXI Document #: 38-05343 Rev. *B Inputs/Outputs X High Z Deselect/Power-Down High Z Deselect/Power-Down L Data Out (I/O –I/O ) Read Data Out (I/O –I/O ); Read (Lower byte only I/O –I/O in High Data Out (I/O –I/O ) ...
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... Document #: 38-05343 Rev. *B © Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...
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Document History Page Document Title:CY62147DV18 MoBL2™ 4-Mb (256K x 16) Static RAM Document Number: 38-05343 Issue Orig. of REV. ECN NO. Date Change ** 127482 06/17/03 *A 131009 11/26/03 *B 229908 See ECN Document #: 38-05343 Rev. *B Description of ...