CY62147CV18LL-55BAI Cypress Semiconductor Corp, CY62147CV18LL-55BAI Datasheet

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CY62147CV18LL-55BAI

Manufacturer Part Number
CY62147CV18LL-55BAI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62147CV18LL-55BAI

Density
4Mb
Access Time (max)
55ns
Operating Supply Voltage (typ)
1.8V
Package Type
BGA
Operating Temp Range
-40C to 85C
Supply Current
7mA
Operating Supply Voltage (min)
1.65V
Operating Supply Voltage (max)
1.95V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Word Size
16b
Lead Free Status / Rohs Status
Not Compliant
Features
Functional Description
The CY62147CV18 is a high-performance CMOS static RAM
organized as 256K words by 16 bits. This device features ad-
vanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life™ (MoBL™) in portable
applications such as cellular telephones. The device also has
an automatic power-down feature that significantly reduces
MoBL, MoBL2, and More Battery Life are trademarks of Cypress Semiconductor Corporation.
Cypress Semiconductor Corporation
Document #: 38-05011 Rev. *B
• High Speed
• Low voltage range:
• Pin Compatible w/ CY62147V18/BV18
• Ultra-low active power
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
Logic Block Diagram
— 55 ns and 70 ns availability
— CY62147CV18: 1.65V 1.95V
— Typical Active Current: 0.5 mA @ f = 1 MHz
— Typical Active Current: 2 mA @ f = f
A
A
A
A
A
A
A
A
A
A
A
10
9
0
5
8
7
4
2
1
6
3
Pow er
Circuit
COLUMN DECODER
DATA IN DRIVERS
max
-
Down
RAM Array
2048 X 2048
256K x 16
(70 ns speed)
3901 North First Street
power consumption by 99% when addresses are not toggling.
The device can also be put into standby mode when deselect-
ed (CE HIGH or both BLE and BHE are HIGH). The input/out-
put pins (I/O
state when: deselected (CE HIGH), outputs are disabled (OE
HIGH), both Byte High Enable and Byte Low Enable are dis-
abled (BHE, BLE HIGH), or during a write operation (CE LOW
and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O
then data from memory will appear on I/O
Truth Table at the back of this data sheet for a complete de-
scription of read and write modes.
The CY62147CV18 is available in a 48-ball FBGA package.
CE
BHE
BLE
17
San Jose
). If Byte High Enable (BHE) is LOW, then data
0
through I/O
256K x 16 Static RAM
0
8
I/O
I/O
to I/O
through I/O
0
8
CY62147CV18 MoBL2™
–I/O
–I/O
BHE
WE
CE
OE
BLE
7
. If Byte High Enable (BHE) is LOW,
15
7
15
) are placed in a high-impedance
CA 95134
15
0
) is written into the location
through A
Revised October 31, 2001
8
0
17
to I/O
through I/O
).
408-943-2600
15
. See the
7
), is
0

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CY62147CV18LL-55BAI Summary of contents

Page 1

... MoBL, MoBL2, and More Battery Life are trademarks of Cypress Semiconductor Corporation. Cypress Semiconductor Corporation Document #: 38-05011 Rev. *B power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselect- ed (CE HIGH or both BLE and BHE are HIGH). The input/out- ...

Page 2

Pin Configuration Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature Ambient Temperature with Power Applied Supply Voltage to Ground Potential Operating Range Device CY62147CV18 Product Portfolio V Range ...

Page 3

Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current GND < Output Leakage OZ ...

Page 4

AC Test Loads and Waveforms OUTPUT INCLUDING JIG AND SCOPE Equivalent to: THÉ VENIN EQUIVALENT RTH OUTPUT Parameters Data Retention Characteristics Parameter Description V V for Data ...

Page 5

Switching Characteristics Over the Operating Range Parameter Description READ CYCLE t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW to Data Valid ACE t OE LOW to Data ...

Page 6

Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) ADDRESS DATA OUT PREVIOUS DATA VALID Read Cycle No. 2 (OE Controlled) ADDRESS BHE/BLE t LZBE HIGH IMPEDANCE DATA OUT t LZCE SUPPLY CURRENT ...

Page 7

Switching Waveforms Write Cycle No. 1(WE Controlled) ADDRESS BHE/BLE OE DATA I/O NOTE 17 t HZOE Write Cycle No. 2 (CE Controlled) ADDRESS CE WE BHE/BLE OE DATA I/O NOTE 17 t HZOE Notes: 15. Data ...

Page 8

Switching Waveforms Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS CE BHE/BLE NOTE 17 DATAI/O Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 17 Document #: 38-05011 ...

Page 9

Typical DC and AC Characteristics ( Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Operating Current vs. Supply Voltage MoBL2 2.4 2.0 1.6 1.2 0.8 0.4 0.0 1.65 SUPPLY ...

Page 10

... Ordering Information Speed (ns) Ordering Code 70 CY62147CV18LL-70BAI CY62147CV18LL-70BVI 55 CY62147CV18LL-55BAI CY62147CV18LL-55BVI Package Diagrams 48-Ball ( 8 1.2 mm) Fine Pitch BGA BA48B Note: 18. Gray Shading represents preliminary information. Document #: 38-05011 Rev. *B Package Name Package Type BA48B 48-Ball Fine Pitch BGA ( 8 1.2 mm) BV48A 48-Ball Fine Pitch BGA ( mm) BA48B 48-Ball Fine Pitch BGA ( ...

Page 11

... Document #: 38-05011 Rev. *B © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

Page 12

Document Title: CY62147CV18 MoBL2™, 256K x 16 Static RAM Document Number: 38-05011 Issue REV. ECN NO. Date ** 106265 5/7/01 *A 108941 08/24/01 *B 110573 11/02/01 Document #: 38-05011 Rev. *B Orig. of Change HRT/MGN New Data Sheet MGN From ...

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