CY62138CV30LL-55BVI Cypress Semiconductor Corp, CY62138CV30LL-55BVI Datasheet - Page 5

• Manufacturer Part Number: CY62138CV30LL-55BVI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62138CV30LL-55BVI

• Density: 2Mb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3V
• Address Bus: 18b
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 15mA
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.3V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 36
• Word Size: 8b
• Number Of Words: 256K
• Lead Free Status / Rohs Status: Not Compliant

Data Retention Characteristics
Data Retention Waveform
Switching Characteristics
Document #: 38-05200 Rev. *D
V
I
t
t
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
Notes:
10. t
11. The internal write time of the memory is defined by the overlap of WE, CE
CCDR
CDR
R
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
7.
8.
9.
DR
[7]
Parameter
Full-device AC operation requires linear V
Test conditions assume signal transition time of 5 ns or less, timing reference levels of V
specified I
At any given temperature and voltage condition, t
signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write.
[6]
HZOE
Parameters
Parameter
V
CE
CE
, t
or
R
V
CC
R1
R2
HZCE
TH
TH
2
1
[11]
OL
/I
, and t
OH
and 30-pF load capacitance.
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
HZWE
CC
for Data Retention
transitions are measured when the outputs enter a high-impedance state.
Description
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
OE LOW to Data Valid
OE LOW to Low-Z
OE HIGH to High-Z
CE
CE
CE
CE
Write Cycle Time
CE
1
1
1
1
1
1
LOW and CE
LOW and CE
HIGH or CE
LOW and CE
HIGH or CE
LOW and CE
Over the Operating Range
16600
15400
8000
2.5V
1.20
CC
ramp from V
V
(Over the Operating Range)
Description
CC(min.)
t
CDR
HZCE
2
2
2
2
2
2
V
CE
V
LOW to High-Z
LOW to Power-down
[9]
HIGH to Data Valid
[9, 10]
HIGH to Low-Z
HIGH to Power-up
HIGH to Write End
CC
IN
is less than t
1
DR
> V
= 1.5V
> V
to V
CC
CC
CC(min.)
Conditions
LZCE
– 0.2V or CE
0.2V or V
DATA RETENTION MODE
, t
[9, 10]
[8]
1
> 100 s or stable at V
[9]
HZOE
= V
1550
3.0V
1105
1.75
645
IL
, and CE
is less than t
V
IN
DR
< 0.2V
2
> 1.5 V
Min.
< 0.2V
55
10
10
55
45
CC(typ.)
2
5
0
= V
LZOE
IH
55 ns
/2, input pulse levels of 0 to V
. All signals must be ACTIVE to initiate a write and any of these
CC(min.)
, and t
CY62138CV25/30/33 MoBL
Min.
1.5
t
RC
Max.
0
55
55
25
20
20
55
> 100 s.
HZWE
1216
1374
3.3V
1.75
645
is less than t
Typ.
CY62138CV MoBL
1
Min.
V
70
10
10
70
60
[5]
CC(min.)
5
0
t
R
LZWE
70 ns
CC(typ.)
V
for any given device.
CC(max.)
Max.
, and output loading of the
Max.
6
70
70
35
25
25
70
Unit
V
Page 5 of 12
Unit
ns
ns
Unit
V
A
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
®
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