TE28F800B3BA110 Intel, TE28F800B3BA110 Datasheet - Page 49

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TE28F800B3BA110

Manufacturer Part Number
TE28F800B3BA110
Description
Manufacturer
Intel
Datasheet

Specifications of TE28F800B3BA110

Cell Type
NOR
Density
8Mb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
19b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
512K
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TE28F800B3BA110
Manufacturer:
INT
Quantity:
5 960
9.0
9.1
9.1.1
9.1.2
Datasheet
Power and Reset Specifications
Power-Up/Down Characteristics
To prevent any condition that may result in a spurious write or erase operation, Intel recommends
that you power-up V
together. Intel also recommends power-up V
powerdown with or slightly before V
If V
applying VCCQ and VPP. Device inputs must not be driven before supply voltage = VCCMin.
Power supply transitions must only occur when RP# is low.
RP# Connected to System Reset
The use of RP# during system reset is important with automated program/erase devices because the
system expects to read from the flash memory when it exits reset. If a CPU reset occurs without a
flash memory reset, proper CPU initialization will not occur because the flash memory may be
providing status information instead of array data. Intel recommends connecting RP# to the system
CPU RESET# signal to allow proper CPU/flash initialization following system reset.
System designers must guard against spurious writes when V
both WE# and CE# must be low for a command write, driving either signal to V
writes to the device. The CUI architecture provides additional protection since alteration of
memory contents can occur only after successful completion of the two-step command sequences.
The device is also disabled until RP# is brought to V
By holding the device in reset (RP# connected to system POWERGOOD) during power-up/down,
invalid bus conditions during power-up can be masked, providing yet another level of memory
protection.
V
The CUI latches commands as issued by system software and is not altered by V
transitions or WSM actions. Its default state upon power-up, after exit from reset mode or after
V
After any program or Block-Erase operation is complete (even after V
V
the flash-memory array is required.
CC
PPLK
CC
CCQ
transitions above V
, V
), the CUI must be reset to read-array mode through the Read Array command if access to
and/or VPP are not connected to the V
PP,
and RP# Transitions
CC
and V
LKO
(Lockout voltage), is read-array mode.
CCQ
together. Conversely, V
CC
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
.
PP
with or slightly after V
CC
supply, then V
IH
, regardless of the state of its control inputs.
CC
CC
and V
voltages are above V
CC
CCQ
must attain V
CC
PP
must power-down
. Conversely, V
transitions down to
IH
PP
CC
will inhibit
or CE#
Min before
LKO
PP
. Because
must
49

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