TE28F800C3TA110 Micron Technology Inc, TE28F800C3TA110 Datasheet - Page 38

• Manufacturer Part Number: TE28F800C3TA110
• Manufacturer: Micron Technology Inc

Specifications of TE28F800C3TA110

• Density: 8Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

Table 20: Reset Specifications
Figure 13: Reset Operations Waveforms
8.6
Datasheet
38
t
t
Notes:
1.
2.
3.
PLRH1
PLRH2
Symbol
If t
If RP# is asserted while a Block Erase or Word Program operation is not executing, the reset will
complete within 100 ns.
Sampled, but not 100% tested.
PLPH
RP# Low to Reset during Block Erase
RP# Low to Reset during Program
is < 100 ns the device may still reset but this is not guaranteed.
Power Supply Decoupling
Flash memory power-switching characteristics require careful device decoupling.
System designers should consider the following three supply current issues:
Transient current magnitudes depend on the device outputs’ capacitive and inductive
loading. Two-line control and proper decoupling capacitor selection will suppress these
transient voltage peaks. Each flash device should have a 0.1 µF ceramic capacitor
connected between each V
frequency, inherently low-inductance capacitors should be placed as close as possible
to the package leads.
• Standby current levels (I
• Read current levels (I
• Transient peaks produced by falling and rising edges of CE#.
Parameter
(A ) R e s e t d u rin g R e a d M o d e
(B ) R e s e t d u rin g P ro g ra m o r B lo c k E ra s e ,
(C ) R e s e t P ro g ra m o r B lo c k E ra s e ,
R P # (P )
R P # (P )
R P # (P )
V
V
V
V
V
V
IH
IL
IH
IH
IL
IL
CCR
CC
CCS
)
and GND, and between its V
t
C o m p le te
t
P L P H
)
P L R H
A b o rt
t
t
t
P L P H
P L P H
P L R H
C o m p le te
P o w e r-
D o w n
D e e p
A b o rt
t
t
t
P H Q V
P H W L
P H E L
t
Min
V
P L P H
CC
t
t
t
t
t
t
P H Q V
P H W L
P H E L
2.7 V – 3.6 V
P H Q V
P H W L
P H E L
>
t
P L P H
t
P L R H
<
Max
t
22
12
P L R H
PP
and VSS. These high-
Unit
µs
µs
C3 Discrete
March 2008
Notes
290645-24
3
3