LH28F400BVHE-TL85 Sharp Electronics, LH28F400BVHE-TL85 Datasheet - Page 34

• Manufacturer Part Number: LH28F400BVHE-TL85
• Manufacturer: Sharp Electronics

Specifications of LH28F400BVHE-TL85

• Cell Type: NOR
• Density: 4Mb
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19/18Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 512K/256K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

NOTES:
1. Read timing characteristics during block erase and word/byte write operations are the same as during read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration)
7. If BYTE# switch during reading cycle, exist the regulations separately.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
PHHWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
QVSL
FVWH
WHFV
Sym.
Refer to AC Characteristics for read-only operations.
word/byte write success (SR.1/3/4/5=0).
Configuration) for testing characteristics.
for testing characteristics.
PP
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
WP#V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
High
WP# V
High
BYTE# Setup to WE# Going High
BYTE# Hold from WE# High
PP
PP
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
HH
IH
HH
IH
Setup to WE# Going High
Hold from Valid SRD, RY/BY#
Setup to WE# Going High
Hold from Valid SRD, RY/BY#
Parameter
PPH1/2/3
IN
and D
(and if necessary RP# should be held at V
V
IN
CC
for block erase or word/byte write.
=5V±0.5V, 5V±0.25V, T
Notes
2,4
2,4
2,4
2
2
2
2
3
3
7
7
V
A
Min.
100
100
100
=-40°C to +85°C
CC
85
10
40
40
40
10
30
40
85
1
0
5
0
0
0
0
=5V±0.25V
Max.
90
HH
(5)
) until determination of block erase or
V
Min.
100
100
100
90
10
40
40
40
10
30
40
90
CC
1
0
5
0
0
0
0
=5V±0.5V
Max.
90
(6)
Rev. 1.02
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns