M28W160ECB70ZB6 Micron Technology Inc, M28W160ECB70ZB6 Datasheet - Page 36

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M28W160ECB70ZB6

Manufacturer Part Number
M28W160ECB70ZB6
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M28W160ECB70ZB6

Cell Type
NOR
Density
16Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
1M
Supply Current
18mA
Mounting
Surface Mount
Pin Count
46
Lead Free Status / Rohs Status
Not Compliant

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M28W160ECT, M28W160ECB
Table 27. CFI Query System Interface Information
36/50
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00B4h
00C6h
000Ah
0027h
0036h
0004h
0004h
0000h
0005h
0005h
0003h
0000h
Data
V
V
V
V
Typical time-out per single word program = 2
Typical time-out for Double Word Program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for Double Word Program = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
Description
n
n
times typical
ms
n
times typical
n
n
n
µs
ms
µs
n
n
times typical
times typical
512µs
512µs
Value
11.4V
12.6V
16µs
16µs
2.7V
3.6V
NA
NA
1s
8s

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