IRFR024N International Rectifier, IRFR024N Datasheet - Page 2

• Manufacturer Part Number: IRFR024N
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFR024N

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.075Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 17A
• Power Dissipation: 45W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Not Compliant

IRFR/U024N
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
I
I
V
t
Q
t
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
L
S
SM
rr
on
DSS
GSS
d(on)
r
d(off)
f
V
SD
fs
D
S
rr
Repetitive rating; pulse width limited by
V
(BR)DSS
GS(th)
I
T
DS(on)
iss
oss
rss
max. junction temperature. ( See fig. 11 )
R
2
g
gs
gd
SD
(BR)DSS
DD
J
G
= 25 , I
= 25V, starting T
175°C
10A, di/dt
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 10A. (See Figure 12)
280A/µs, V
J
= 25°C, L = 1.0mH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
––– 0.052 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
2.0
4.5
55
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Pulse width
Uses IRFZ24N data and test conditions.
This is applied for I-PAK, L
lead and center of die contact.
–––
–––
–––
120
–––
–––
–––
––– 0.075
–––
–––
–––
–––
–––
––– -100
–––
370
140
56
4.9
4.5
34
19
27
65
7.5
17
180
–––
1.3
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
5.3
7.6
83
4.0
25
20
68
300µs; duty cycle
V/°C
nC
nH
ns
µA
nA
nC
ns
pF
A
V
V
V
S
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
= 10A
= 10A
= 2.6 , See Fig. 10
= 24
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 28V
= 0V
S
of D-PAK is measured between
GS
, I
D
S
F
2%.
Conditions
D
D
D
= 10A
= 250µA
= 10A, V
Conditions
GS
GS
= 250µA
= 10A
= 10A
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 0V
= 150°C
G
G
S
+L
D
)
S
D
S
D