TLP181GB Toshiba, TLP181GB Datasheet - Page 3
TLP181GB
Manufacturer Part Number
TLP181GB
Description
Manufacturer
Toshiba
Datasheet
1.TLP181GB.pdf
(9 pages)
Specifications of TLP181GB
Input Type
DC
Output Type
DC
Output Device
Transistor
Number Of Elements
1
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Forward Current
50mA
Collector-emitter Voltage
80V
Package Type
MFSOP
Collector Current (dc) (max)
50mA
Isolation Voltage
3750Vrms
Power Dissipation
200mW
Collector-emitter Saturation Voltage
0.4V
Current Transfer Ratio
600%
Pin Count
4
Mounting
Surface Mount
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TLP181GB
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TLP181GB(TPL
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
TLP181GB(TPL
Manufacturer:
NXP
Quantity:
80 000
Company:
Part Number:
TLP181GB(TPL,F,T)
Manufacturer:
TOS
Quantity:
120
Absolute Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta ≥ 25°C)
Isolation voltage
(AC, 1min., R.H. ≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) Device considered a two−terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together
Supply voltage
Forward current
Collector current
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current detating
Pulse forward current
(100μs pulse, 100pps)
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Collector power dissipation
(1 Circuit)
Collector power dissipation
derating (1 Circuit Ta ≥ 25°C)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
Characteristic
(Note 1)
(Ta = 25°C)
ΔP
ΔP
ΔI
Symbol
V
V
T
BV
T
T
F
I
V
P
CEO
ECO
C
P
T
I
I
FP
T
T
stg
opr
sol
C
F
/ °C
R
C
T
j
j
/ °C
/ °C
S
Symbol
V
I
I
CC
C
F
3
−1.4 (Ta ≥89°C)
Min
―
―
―
−55 to 125
−55 to 110
260 (10s)
Rating
3750
−1.5
−2.0
125
150
125
200
50
80
50
1
5
7
Typ.
16
5
1
Max
48
20
10
Unit
mA
mA
V
mW / °C
mW / °C
mA / °C
V
Unit
mW
mW
mA
mA
°C
°C
°C
°C
°C
rms
A
V
V
V
2009-11-12
TLP181