M45PE40-VMW6G Micron Technology Inc, M45PE40-VMW6G Datasheet - Page 23

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M45PE40-VMW6G

Manufacturer Part Number
M45PE40-VMW6G
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M45PE40-VMW6G

Lead Free Status / Rohs Status
Compliant

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M45PE40
6.6
Read data bytes at higher speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
data bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on serial data output (Q), each bit
being shifted out, at a maximum frequency f
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single read data bytes at higher speed (FAST_READ) instruction.
When the highest address is reached, the address counter rolls over to 000000h, allowing
the read sequence to be continued indefinitely.
The read data bytes at higher speed (FAST_READ) instruction is terminated by driving Chip
Select (S) High. Chip Select (S) can be driven High at any time during data output. Any read
data bytes at higher speed (FAST_READ) instruction, while an erase, program or write cycle
is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 11. Read data bytes at higher speed (FAST_READ) instruction sequence
1. Address bits A23 to A19 are don’t care.
S
C
D
Q
S
C
D
Q
and data-out sequence
0
7 6 5 4 3 2
1
32 33 34
High Impedance
2
Instruction
Dummy byte
3 4 5 6 7 8 9 10
35
36 37 38 39 40 41 42 43 44 45 46
1
23
0
MSB
22 21
Figure
7 6 5 4 3 2
24-bit address
DATA OUT 1
C
11.
3 2 1 0
, during the falling edge of Serial Clock (C).
28 29 30 31
1
0
47
MSB
7 6 5 4 3 2 1 0
DATA OUT 2
MSB
7
AI04006
Instructions
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