SD5001N Vishay, SD5001N Datasheet - Page 3

• Manufacturer Part Number: SD5001N
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SD5001N

• Number Of Elements: 4
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 70Ohm
• Drain-source On-volt: 10V
• Gate-source Voltage (max): -15V
• Continuous Drain Current: 50mA
• Power Dissipation: 500mW
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 16
• Package Type: PDIP
• Lead Free Status / Rohs Status: Not Compliant

Notes:
a.
b.
c.
Typical Characteristics
Siliconix
S-51850—Rev. G, 14-Apr-97
Switching
Turn On Time
Turn-On Time
Turn Off Time
Turn-Off Time
T
B is is the body (substrate) and V
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
A
300
240
180
120
100
= 25 C unless otherwise noted.
60
80
60
40
20
0
0
–60
0
V
I
On-Resistance vs. Gate-Source Voltage
D
SB
= 5 mA, V
– Source-Substrate Breakdown Voltage (V)
On-Resistance vs. Temperature
–20
4
T
V
BS
A
GS
– Temperature ( C)
= 0 V
8
20
= 5 V
V
GS
(BR)
15 V
= 4 V
is breakdown.
12
60
t
t
d(on)
d(off)
t
t
r
f
5 V
10 V
16
20 V
10 V
100
V
SB
S
= 5 V, V
20
V
140
DD
= 5 V, R
IN
N
0 to 5 V, R
L
= 680
100 pA
10 pA
10 nA
1 nA
SD5000/5400 Series
1 pA
G
G
20
16
12
8
4
0
= 25
0
Common-Source Forward Transconductance
1
V
V
I
I
I
Leakage Current vs. Applied Voltage
DS
BS
D (off)
S(off)
SBO
I
S(off)
= 0 V
= 15 V
@ V
0.5
0.6
4
@ V
2
6
@ V
125 C
T
GB
I
GD
A
D
GS
vs. Drain Current
= 55 C
– Drain Current (mA)
= 0 V, Drain Open
Applied Voltage (V)
= V
I
= V
I
I
GSS (Diode)
SBO
D(off)
8
BD
BG
10
= –5V
= –5 V
1
1
12
25 C
16
1
1
DMCA
ns
ns
100
20
3