TPC8303 Toshiba, TPC8303 Datasheet - Page 3

• Manufacturer Part Number: TPC8303
• Manufacturer: Toshiba
• Type: Power MOSFETr

Specifications of TPC8303

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 4.5A
• Power Dissipation: 1.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

Electrical Characteristics
Source−Drain Ratings and Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Pulse (Note 1)
V
V
(Ta = 25°C)
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
V
t
Q
t
DSF
off
oss
t
on
rss
t
iss
gs
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
I
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −4.5 A, V
= −30 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±16 V, V
= −4 V, I
= −10 V, I
≈ −24 V, V
3
D
(Ta = 25°C)
D
D
D
Test Condition
Test Condition
GS
GS
GS
DS
GS
= −2.2 A
GS
GS
= −1 mA
= −2.2 A
= −2.2 A
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V, I
—
D
= −4.5 A
−0.8
Min.
Min.
−30
−15
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
Typ.
970
180
370
160
—
—
—
—
—
55
27
17
20
75
28
16
12
—
—
7
2006-11-16
TPC8303
Max.
Max.
−2.0
±10
−10
−18
1.2
65
35
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
A
V