TPC8009H Toshiba, TPC8009H Datasheet - Page 5

• Manufacturer Part Number: TPC8009H
• Manufacturer: Toshiba
• Type: Power MOSFETr

Specifications of TPC8009H

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.01Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 13A
• Power Dissipation: 1.9W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

10000
1000
100
1.6
1.2
0.8
0.4
18
16
14
12
10
10
−80
8
6
4
2
0
2
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
10
Capacitance – V
0
1
R
DS (ON)
P
D
100
40
– Ta
I D = 13、6.5、3.5 A
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
I D = 13、6.5、3.5 A
80
10
DS
DS
Common source
Pulse test
150
(V)
120
C oss
C rss
C iss
160
100
200
5
100
0.1
2.5
1.5
0.5
10
30
25
20
15
10
−80
1
2
1
0
5
0
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
V DD = 24 V
12
6
Dynamic Input/Output Characteristics
10
−40
−0.2
5
V DS
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
3
10
0
5
−0.4
I
DR
V
th
– V
15
40
– Ta
Common source Ta = 25°C
I D = 13 A Pulse test
DS
V GS
−0.6
1
6
g
80
20
DS
(nC)
Common source
Ta = 25°C
Pulse test
V DD = 24 V
(V)
−0.8
V GS = 0 V
TPC8009-H
120
25
2006-11-16
12
160
−1
30
12
10
8
6
4
2
0