APT10035LLLG MICROSEMI, APT10035LLLG Datasheet - Page 4

• Manufacturer Part Number: APT10035LLLG
• Manufacturer: MICROSEMI
• Type: Power MOSFETr

Specifications of APT10035LLLG

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.35Ohm
• Drain-source On-volt: 1kV
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 28A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-264
• Lead Free Status / Rohs Status: Compliant

Typical Performance Curves
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
2500
2000
1500
1000
112
180
160
140
120
100
500
50
10
16
12
80
60
40
20
FIGURE 10, MAXIMUM SAFE OPERATING AREA
1
8
4
0
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
V
0
0
0
1
DS
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
V
R
T
L = 100µH
E
diode reverse recovery.
T C =+25°C
T J =+150°C
SINGLE PULSE
J
DD
G
J
DD
G
ON
LIMITED BY R DS (ON)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
= 125°C
= 125°C
D
= 5
OPERATION HERE
= 5
= 670V
= 670V
includes
= 28A
Q
10
10
50
g
, TOTAL GATE CHARGE (nC)
t
d(on)
10
E
100
V DS =500V
20
20
off
V DS =200V
I
I
D
D
(A)
(A)
150
30
30
100
t
d(off)
E
on
V DS =800V
200
40
40
1000
250
50
50
10mS
100µS
1mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
1,000
5000
4000
3000
2000
1000
100
200
100
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
80
60
40
20
1
0
0
0.3
V
V
0
0
0
DS
SD
V
R
T
L = 100µH
DD
J
G
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 125°C
5
= 5
T J =+150°C
= 670V
0.5
R
10
10 15 20 25 30
10
G
, GATE RESISTANCE (Ohms)
0.7
20
20
I
D
T J =+25°C
0.9
(A)
30
30
V
I
T
L = 100µH
E
diode reverse recovery.
D
J
DD
ON
1.1
= 28A
t
= 125°C
f
= 670V
includes
35 40 45 50
APT10035B2LL - LLL
t
E
r
off
40
40
1.3
E
C oss
C iss
C rss
on
1.5
50
50