AUIRF1324WL International Rectifier, AUIRF1324WL Datasheet

54T8935

AUIRF1324WL

Manufacturer Part Number
AUIRF1324WL
Description
54T8935
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRF1324WL

Transistor Polarity
N Channel
Continuous Drain Current Id
240A
Drain Source Voltage Vds
24V
On Resistance Rds(on)
0.00116ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
300W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
1.3 mOhms
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
382 A
Power Dissipation
300 W
Mounting Style
Through Hole
Package / Case
TO-262WL
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF1324WL
Manufacturer:
TI
Quantity:
1 001
Part Number:
AUIRF1324WL
Manufacturer:
IR
Quantity:
20 000
Absolute Maximum Ratings
indicated in the specifications is not implied.
www.irf.com
Description
Specifically design for automotive applications this Widelead TO-
262 package part has the advantage of having over 50% lower
lead resistance and delivering over 20% lower Rds(on) when
compared with a traditional TO-262 package housing the same
silicon die. This greatly helps in reducing condition losses, achieving
higher current levels or enabling a system to run cooler and have
improved efficiency. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in
Automotive and other applications.
Features
l
l
l
l
l
l
l
l
HEXFET
*Qualification standards can be found at http://www.irf.com/
I
I
I
I
P
V
E
I
E
dv/dt
T
T
Thermal Resistance
R
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
50% Lower Lead Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
C
C
C
C
®
= 25°C
= 100°C
= 25°C
= 25°C
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
j
Parameter
Parameter
Ã
functional operation of the device at these or any other condition beyond those
f
GS
GS
GS
AUTOMOTIVE GRADE
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Package Limited)
e
G
Gate
G
See Fig. 14, 15, 22a, 22b,
Typ.
–––
300 (1.6mm from case)
D
S
-55 to + 175
AUIRF1324WL
V
R
I
I
Max.
382
270
D (Silicon Limited)
D (Package Limited)
1530
HEXFET
240
300
± 20
530
Drain
2.0
1.3
(BR)DSS
DS(on)
D
typ.
max.
Max.
0.50
®
Power MOSFET
Source
1.16m Ω
1.30m Ω
382A
S
240A
Units
Units
24V
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
05/12/11
1

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AUIRF1324WL Summary of contents

Page 1

... AUTOMOTIVE GRADE G Gate functional operation of the device at these or any other condition beyond those Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Package Limited à f Parameter j AUIRF1324WL ® HEXFET Power MOSFET V D (BR)DSS R typ. DS(on) max (Silicon Limited (Package Limited Drain Max ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance R Internal Gate Resistance G I Drain-to-Source Leakage ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH 4. 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10000 1000 100 175° 25° ...

Page 5

175°C 100 10 1.0 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 400 Limited By Package 300 200 100 100 T ...

Page 6

D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.05 0.10 10 Allowed ...

Page 7

TOP Single Pulse BOTTOM 1.0% Duty Cycle 500 195A 400 300 200 100 100 Starting Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com Notes on Repetitive ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 21 D.U 20V 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit V DS D.U.T ...

Page 9

TO-262 WideLead Package Outline Dimensions are shown in millimeters (inches) TO-262 WideLead Part Marking Information www.irf.com 9 ...

Page 10

... Ordering Information Base part number Package Type AUIRF1324WL TO-262 WideLead 10 Standard Pack Form Quantity Tube 50 Complete Part Number AUIRF1324WL www.irf.com ...

Page 11

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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