NTMD5836NL ON Semiconductor, NTMD5836NL Datasheet - Page 5
NTMD5836NL
Manufacturer Part Number
NTMD5836NL
Description
55T6925
Manufacturer
ON Semiconductor
Datasheet
1.NTMD5836NL.pdf
(10 pages)
Specifications of NTMD5836NL
Module Configuration
Dual N Channel
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0095ohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTMD5836NLR2G
Manufacturer:
AD
Quantity:
201
0.035
0.015
0.025
0.03
0.02
0.01
1.6
1.4
1.2
0.8
70
60
50
40
30
20
10
0
1
−50
0
2
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
10V
GS
= 10 A
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics −
−25
3
= 4.5 V
V
V
DS
GS
T
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
8.5 V
4
0
Temperature − Channel 1
6.5 V
4.5 V
Voltage − Channel 1
25
5
5.5 V
2
Channel 1
50
6
3
TYPICAL PERFORMANCE CURVES
75
7
3.9 V
3.5 V
V
100
3.1 V
8
GS
T
I
D
T
J
4
= 2.5 V
= 10 A
J
= 25°C
http://onsemi.com
= 25°C
125
9
150
10
5
5
100000
10000
0.015
0.005
1000
0.02
0.01
70
60
50
40
30
20
10
0
10
2
2
Figure 4. On−Resistance vs. Drain Current and
Figure 2. Transfer Characteristics − Channel 1
V
T
V
Figure 6. Drain−to−Source Leakage Current
J
DS
GS
V
= 25°C
T
DS
≥ 20 V
= 0 V
J
V
= 25°C
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
Gate Voltage − Channel 1
T
J
vs. Voltage − Channel 1
= 125°C
I
D,
20
3
DRAIN CURRENT (A)
T
T
J
J
= 150°C
= 125°C
T
10
V
V
J
GS
GS
= −55°C
= 4.5 V
= 10 V
30
14
4
18
40
5