2N5114 Vishay, 2N5114 Datasheet - Page 5

• Manufacturer Part Number: 2N5114
• Description: 13C1997
• Manufacturer: Vishay

Specifications of 2N5114

• Breakdown Voltage Vbr: 30V
• Gate-source Cutoff Voltage Vgs(off) Max: 10V
• Continuous Drain Current Id: -90mA
• Gate-source Breakdown Voltage: 30V
• Mounting Type: Through Hole
• Zero Gate Voltage Drain Current Idss Min: -30mA
• Rohs Compliant: No
• Current Rating: -50mA
• Gate-source Cutoff Voltage: 10V

Document Number: 70240
S-40990—Rev. F, 24-May-04
TYPICAL CHARACTERISTICS (T
500
400
300
200
100
200
160
120
1.5
1.2
0.9
0.6
0.3
80
40
0
0
0
0
0
0.01
Transconductance vs. Gate-Source Voltage
V
V
Circuit Voltage Gain vs. Drain Current
Assume V
GS(off)
A
R
GS(off)
T
V
L
125_C
A
−0.1
−0.1
+
= −55_C
+
T
= −0.7 V
−1.5 V
A
= −0.7 V
1 ) R
V
V
Transfer Characteristics
10 V
= −55_C
GS
GS
I
125_C
g
D
DD
fs
I
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
D
R
= 15 V, V
− Drain Current (mA)
L
L
g
−0.2
−0.2
os
25_C
0.1
25_C
DS
= 5 V
V
−0.3
−0.3
GS(off
)
V
f = 1 kHz
= −0.7 V
V
DS
DS
= 10 V
−0.4
−0.4
= 10 V
A
= 25_C UNLESS OTHERWISE NOTED)
−0.5
−0.5
1
2000
1600
1200
800
400
3.2
2.4
1.6
0.8
1.6
1.2
0.8
0.4
4
0
2
0
0
0
0
0.01
Transconductance vs. Gate-Source Voltage
V
V
125_C
GS(off)
T
GS(off)
T
A
A
V
T
125_C
On-Resistance vs. Drain Current
= 25_C
A
−0.4
−0.4
GS(off)
= −55_C
= −55_C
= −1.5 V
= −1.5 V
V
V
2N4338/4339/4340/4341
Transfer Characteristics
GS
GS
25_C
= −0.7 V
I
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
D
− Drain Current (mA)
25_C
−0.8
−0.8
−1.5 V
0.1
−1.2
−1.2
Vishay Siliconix
V
V
f = 1 kHz
DS
DS
= 10 V
= 10 V
−1.6
−1.6
www.vishay.com
−2
−2
1
5