HI9P0547-9Z Intersil, HI9P0547-9Z Datasheet - Page 15

• Manufacturer Part Number: HI9P0547-9Z
• Description: IC MULTIPLEXER DUAL 8X1 28SOIC
• Manufacturer: Intersil
• Type: Analog Multiplexerr

Specifications of HI9P0547-9Z

• Function: Multiplexer
• Circuit: 2 x 8:1
• On-state Resistance: 1.8 kOhm
• Voltage Supply Source: Dual Supply
• Voltage - Supply, Single/dual (±): ±5 V ~ 18 V
• Current - Supply: 0.5mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.300", 7.50mm Width)
• Package: 28SOIC W
• Maximum On Resistance: 1800@±15V Ohm
• Maximum High Level Output Current: 20 mA
• Multiplexer Architecture: 8:1
• Maximum Turn-on Time: 300(Typ)@±15V ns
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE POTENTIAL (NOTE):
NOTE: The substrate appears resistive to the -V
conductor at -V
Metallization Mask Layouts
IN 1
(19)
IN 2
(20)
IN 3
(21)
IN 4
(22)
IN 5
(23)
IN 6
(24)
IN 7
(25)
IN 8
(26)
83.9 mils x 159 mils
Type: CuAl
Thickness: 16k
-V
V- (27)
SUPPLY
(18)
EN
SUPPLY
(17)
A
0
Å
±2k
OUT (28)
potential.
(16) (15)
A
Å
1
A
HI-546
2
15
(14)
A
+V (1)
3
V
(13)
REF
SUPPLY
HI-546, HI-547, HI-548, HI-549
GND
(12)
NC (2)
terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
IN 10
IN 11
IN 12
IN 13
IN 14
IN 15
IN 16
IN 9
(11)
(10)
(9)
(8)
(7)
(6)
(5)
(4)
PASSIVATION:
WORST CASE CURRENT DENSITY:
TRANSISTOR COUNT:
PROCESS:
IN 1A
IN 2A
IN 3A
IN 4A
IN 5A
IN 6A
IN 7A
IN 8A
Type: Nitride Over Silox
Nitride Thickness: 3.5k
Silox Thickness: 12k
1.4 x 10
485
CMOS-DI
(19)
(20)
(21)
(22)
(23)
(24)
(25)
(26)
V- (27)
(18)
EN
5
A/cm
(17)
A
0
2
OUT A (28)
(16) (15)
A
Å
1
Å
A
±2k
HI-547
2
±1k
Å
Å
(14) (13)
NC V
+V (1)
REF
GND
(12)
OUT B(2)
IN 1B
IN 2B
IN 3B
IN 4B
IN 5B
IN 6B
IN 7B
IN 8B
(11)
(10)
(9)
(8)
(7)
(6)
(5)
(4)