JS28F00AM29EWLA Micron Technology Inc, JS28F00AM29EWLA Datasheet

no-image

JS28F00AM29EWLA

Manufacturer Part Number
JS28F00AM29EWLA
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of JS28F00AM29EWLA

Cell Type
NOR
Density
1Gb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Bottom/Top
Address Bus
21/20Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
11.5 to 12.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
128M/64M
Supply Current
31mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Supplier Unconfirmed

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
JS28F00AM29EWLA
Manufacturer:
ROHM
Quantity:
6 000
Part Number:
JS28F00AM29EWLA
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
JS28F00AM29EWLA
Quantity:
101
Company:
Part Number:
JS28F00AM29EWLA
Quantity:
101
Features
May 2010
Supply voltage
— V
— V
Asynchronous Random/Page Read
— Page size: 16 words or 32 bytes
— Page access: 25 ns
— Random access: 100ns (Fortified BGA);
Buffer Program
— 512-word program buffer
Programming time
— 0.88 µs per byte (1.14MB/s) typical when
Memory organization
— Uniform blocks, 128 Kbytes/64 Kwords
Program/Erase controller
— Embedded byte/word program algorithms
Program/ Erase Suspend and Resume
— Read from any block during Program
— Read and Program another block during
Read
110 ns (TSOP)
using full buffer size in buffer program
each
Suspend
Erase Suspend
CC
CCQ
= 2.7 to 3.6 V for Program, Erase and
= 1.65 to 3.6 V for I/O buffers
256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block)
Numonyx™ Axcell™ M29EW
208045-10
Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer
— Faster Buffered/Batch Programming
— Faster Block and Chip Erase
Vpp/WP# pin protection
— Protects first or last block regardless of
Software protection
— Volatile Protection
— Non-Volatile Protection
— Password Protection
— Password Access
Extended Memory block
— 128-word/256-byte block for permanent,
— can be programmed and locked by factory
Low power consumption
— Standby and automatic standby
Minimum 100,000 Program/Erase cycles per
block
ETOX
Fortified BGA and TSOP packages
JESD47E Compliant
Green packages available
— RoHS Compliant
— Halogen Free
block protection settings
secure identification.
or by the customer
TM
* X (65nm) MLC technology
3 V supply flash memory
Datasheet
1

Related parts for JS28F00AM29EWLA

JS28F00AM29EWLA Summary of contents

Page 1

... Read from any block during Program Suspend — Read and Program another block during Erase Suspend May 2010 Numonyx™ Axcell™ M29EW 3 V supply flash memory Unlock Bypass/Block Erase/Chip Erase/Write to Buffer — Faster Buffered/Batch Programming — Faster Block and Chip Erase Vpp/WP# pin protection — ...

Page 2

Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Numonyx™ Axcell™ M29EW 5.2.1 Non-Volatile Protection bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

... Programming and Erase Performance . . . . . . . . . . . . . . . . . . . . . . . . . 75 11 Package Mechanical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 Appendix A Memory Address Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 Appendix B Common Flash Interface (CFI 110 Appendix C Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 C.1 Numonyx pre-locked Extended Memory Block . . . . . . . . . . . . . . . . . . . . 114 C.2 Customer-lockable Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . 115 Appendix D Revision History 116 4 Numonyx™ ...

Page 5

Numonyx™ Axcell™ M29EW Table 1. Signal Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 6

List of Figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 7

... Description The Numonyx™ Axcell™ M29EW flash memory based on 65nm MLC technology is the world’s leading line of parallel NOR flash for embedded applications. It can be read, erased and reprogrammed; and these operations can be performed using a single low voltage (2.7 to 3.6 V) supply. Upon power-up, the memory defaults to its array read mode. ...

Page 8

Description Table 1. Signal Descriptions Name A0-Amax DQ0-DQ7 DQ8-DQ14 DQ15/A 1 CE# OE# WE# RST# RY/BY# BYTE# V CCQ V CC (1) V /WP /WP# may be left unconnected internally connected ...

Page 9

Numonyx™ Axcell™ M29EW Figure 2. TSOP connections ...

Page 10

Description Figure 3. Fortified BGA connections (top and bottom views RFU A3 A7 RY/BY# B Vpp / A26 A4 A17 RST# WP# C RFU A2 A6 A18 D RFU A1 A5 A20 E RFU A0 ...

Page 11

Numonyx™ Axcell™ M29EW Figure 4. Block addresses A[26:-1] 2-Gbit A[25:-1] 1-Gbit A[24:-1] 512-Mbit A[23:-1] 256-Mbit FFFFFFFh 128-KB Array Block FFE0000 h 7FFFFFFh 128-KB Array Block 7FE0000 h 3FFFFFFh 128-KB Array Block 3FE0000 h 1FFFFFFh 128-KB Array Block 1FE0000 h 003FFFFh ...

Page 12

Signal Descriptions 2 Signal Descriptions See Figure 1: Logic signals connected to this device. 2.1 Address inputs (A0-Amax) The Address inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control ...

Page 13

Numonyx™ Axcell™ M29EW 2.7 Write Enable (WE#) The Write Enable pin, WE#, controls the Bus Write operation of the memory’s command interface. 2.8 V /Write Protect (V PP The V /Write Protect pin provides two functions, Write Protect function and ...

Page 14

Signal Descriptions 2.9 Reset (RST#) The Reset pin can be used to apply a Hardware Reset to the memory. A Hardware Reset is achieved by holding Reset Low, V memory will be ready for Bus Read and Bus Write operations ...

Page 15

Numonyx™ Axcell™ M29EW 2.14 V ground the reference for all voltage measurements. The device features two which must be connected to the system ground. 208045-10 Signal Descriptions pins; both SS 15 ...

Page 16

Bus Operations 3 Bus Operations There are five standard bus operations that control the device. These are Bus Read (Random and Page modes), Bus Write, Output Disable, Standby and Automatic Standby. See Table 3: Bus operations, 8-bit mode summary. Typical ...

Page 17

Numonyx™ Axcell™ M29EW 3.5 Reset During Reset mode the memory is deselected and the outputs are high impedance. The memory is in Reset mode when RST standby level, independently from the Chip Enable, Output Enable or Write ...

Page 18

Bus Operations 3.6.4 Hardware Block Protect The V /WP# pin can be used to protect the highest or lowest block. When the highest block (M29EWH) or the lowest block (M29EWL) is protected and the other IL ...

Page 19

Numonyx™ Axcell™ M29EW M Table 3. Bus operations, 8-bit mode (1) Operation CE# OE# WE# RST# V Bus Read Bus Write Standby Output Disable Reset ...

Page 20

Bus Operations Table 5. Read electronic signature - auto select mode - programmer method (8-bit mode) Read CE# OE# WE# (1) cycle Amax-A7 A6 A5- DQ15/A-1 DQ14-DQ8 Manufacturer code Device code (cycle ...

Page 21

Numonyx™ Axcell™ M29EW Table 7. Block protection - auto select mode - programmer method (8-bit mode) (1) Operation CE# OE# WE# Verify M29EWL Extended Memory Block protection indicator M29EWH (bit DQ7) Verify block protection status 1. ...

Page 22

Hardware Protection 4 Hardware Protection The M29EW features a V Section 2: Signal Descriptions 5 Software Protection The M29EW has four different software protection modes: – Volatile Protection – Non-Volatile Protection – Password Protection – Password Access On first use ...

Page 23

Numonyx™ Axcell™ M29EW 5.1 Volatile Protection mode The volatile Protection allows the software application to easily protect blocks against inadvertent change. However, the protection can be easily disabled when changes are needed. Volatile Protection bits, VPBs, are volatile and unique ...

Page 24

Software Protection 5.2.2 Non-Volatile Protection Bit Lock bit The Non-Volatile Protection Bit Lock bit (NVPB Lock bit global volatile bit for all NVPBs. When set (programmed to ‘0’), it prevents changing the state of the NVPBs. When reset ...

Page 25

Numonyx™ Axcell™ M29EW Figure 5. Software protection scheme Array block Volatile protection Non-volatile protection 1. NVPBs default to ‘1’ (block unprotected) when shipped from Numonyx. A block is protected or unprotected when its NVPB is set to ‘0’ and ‘1’, ...

Page 26

Command Interface 6 Command Interface All Bus Write operations to the memory are interpreted by the command interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result ...

Page 27

... Read CFI Query mode, Bus Read operations to the memory will output data from the Common Flash Interface (CFI) memory area. One Bus Write cycle is required to issue the Read CFI Query command. This command is valid only when the device is in the Read Array or Auto Select mode ...

Page 28

Command Interface any more blocks. Each additional block must therefore be selected within the time-out period of the last block. The time-out timer restarts when an additional block is selected. After the sixth Bus Write operation, a Bus Read operation ...

Page 29

Numonyx™ Axcell™ M29EW Extended Memory Block command must be issued before the erase operation can be resumed. The Erase Suspend command is ignored if written during Chip Erase operations. Refer to Table 28: Programming and Erase Performance out and Block ...

Page 30

Command Interface Further issuing of the Resume command is ignored. Another Program Suspend command can be written after the device has resumed programming. 6.1.10 Program command The Program command can be used to program a value to one address in ...

Page 31

Numonyx™ Axcell™ M29EW Table 9. Standard commands, 8-bit mode Command 1 Read/Reset 3 Manufacturer code Device code Extended Memory Auto 3 Block protection Select indicator Block protection status (4) Program 4 Chip Erase 6 Block Erase 6+ Erase/Program Suspend 1 ...

Page 32

Command Interface Table 10. Standard commands, 16-bit mode Command 1 Read/Reset 3 Manufacturer code Device code Extended Memory Auto 3 Block protection Select indicator Block protection status (4) Program 4 Chip Erase 6 Block Erase 6+ Erase/Program Suspend 1 Erase/Program ...

Page 33

Numonyx™ Axcell™ M29EW 6.2 Fast Program commands The M29EW offers a set of Fast Program commands to improve the programming throughput: – Write to Buffer Program – Unlock Bypass See either Table 11: Fast Program commands, 8-bit mode on page ...

Page 34

Command Interface lie within the 512-word boundary. In addition, any crossing boundary buffer program will result in a program abort. See To program the content of the program buffer, this command must be followed by a Write to Buffer Program ...

Page 35

Numonyx™ Axcell™ M29EW Figure 7. Write to Buffer Program fletcher and pseudo code YES 1. n+1 is the number of addresses to be programmed Write to Buffer Program Abort and Reset must be issued to return the device ...

Page 36

Command Interface loading program buffer address with data, all addresses must fall within the selected program buffer page. 4. DQ7 must be checked since DQ5 and DQ7 may change simultaneously this flow chart location is reached because DQ5=’1’, ...

Page 37

Numonyx™ Axcell™ M29EW 6.2.3 Write to Buffer Program Confirm command The Write to Buffer Program Confirm command is used to confirm a Write to Buffer Program command and to program the N+1 words/bytes loaded in the program buffer by this ...

Page 38

Command Interface To erase multiple block (after the first two Bus Write operations have selected the first block in the list), each additional block in the list can be selected by repeating the second Bus Write operation using the address ...

Page 39

Numonyx™ Axcell™ M29EW Table 11. Fast Program commands, 8-bit mode Command Add Write to Buffer N+5 AAA Program Write to Buffer 1 BAd Program Confirm Buffered Program 3 AAA Abort and Reset Unlock Bypass 3 AAA Unlock Bypass 2 X ...

Page 40

Command Interface Table 12. Fast Program commands, 16-bit mode Command Unlock Bypass 2 Program Unlock Bypass Block 2+ Erase Unlock Bypass Chip 2 Erase Unlock Bypass Write N+3 to Buffer Program Unlock Bypass Reset Don’t care, ...

Page 41

Numonyx™ Axcell™ M29EW 6.3 Protection commands Blocks can be protected individually against accidental program, erase or read operations. The device block protection scheme is shown in either Table 13, or summary of the Block Protection commands. Block protection commands are ...

Page 42

Command Interface 6.3.3 Lock Register command set The M29EW offers a set of commands to access the Lock Register and to configure and verify its content. See the following sections in conjunction with Table 13 and Table Enter Lock Register ...

Page 43

Numonyx™ Axcell™ M29EW An Exit Protection Command Set command must be issued to return the device to Read mode. Password Unlock command The Password Unlock command is used to clear the NVPB Lock bit allowing to modify the NVPBs. The ...

Page 44

Command Interface Figure 8. NVPB Program/Erase algorithm 44 Enter NVPB command set. Program NVPB Addr = BAd Read Byte twice Addr = BAd NO DQ6= Toggle YES NO DQ5=1 Wait 500 μs YES Read Byte twice Addr = BAd NO ...

Page 45

Numonyx™ Axcell™ M29EW 6.3.6 NVPB Lock Bit command set Enter NVPB Lock Bit Command Set command Three bus Write cycles are required to issue the Enter NVPB Lock Bit Command Set command. Once the command has been issued, the commands ...

Page 46

Command Interface Table 13. Block Protection commands, 8-bit mode Command 1st 2nd Ad Data Ad Data Enter Lock Register 3 AAA AA 555 Command (4) Set Lock Register DAT Program Lock Register DATA ...

Page 47

Numonyx™ Axcell™ M29EW address; Dat = data; BAd = Any address in the Block Read data; PWDn = Password byte PWAn = Password Address ( 7 Don’t ...

Page 48

Command Interface Table 14. Block Protection commands, 16-bit mode Command 1st Ad Data Enter Lock Register 3 555 AA Command (4) Set Lock Register Program Lock Register DATA 1 X (5) Read Enter Password Protection 3 555 ...

Page 49

Numonyx™ Axcell™ M29EW address; Dat = data; BAd = Any address in the Block Read data; PWDn = Password byte PWAn = Password Address ( 3 Don’t ...

Page 50

Registers 7 Registers The device feature two registers Lock Register that allows to configure the memory blocks and Extended Memory Block protection (see 2. A Status Register that provides information on the current or previous Program or Erase ...

Page 51

Numonyx™ Axcell™ M29EW Table 15. Lock Register bits (2) DQ15-3 Password Protection Mode Lock Reserved 1. DQ0, DQ1 and DQ2 Lock Register bits are set to ‘1’ when shipped from the Numonyx. 2. DQ15 to DQ3 are reserved and default ...

Page 52

Registers Figure 9. Lock Register program flowchart Write Lock Register Exit command: Device returned Add Dont' care, Data 90h to Read mode Add Dont' care, Data 00h the programmed data (see 2. Each bit of the Lock ...

Page 53

Numonyx™ Axcell™ M29EW 7.2 Status Register The M29EW discrete device has one Status Register. The various bits convey information and errors on the current and previous program/erase operation. Bus Read operations from any address within the memory, always read the ...

Page 54

Registers before other commands are issued. The Error bit is output on DQ5 when the Status Register is read. Note that the Program command cannot change a bit set to ‘0’ back to ‘1’ and attempting will ...

Page 55

Numonyx™ Axcell™ M29EW Table 17. Status Register bits Operation (2) Program Program During Erase Suspend (2) Buffered Program Abort Program Error Chip Erase Block Erase before timeout Block Erase Erase Suspend Erase Error 1. Unspecified data bits should be ignored. ...

Page 56

Registers Figure 10. Data polling flow chart 56 START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA DQ5 = 1 YES YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA ...

Page 57

Numonyx™ Axcell™ M29EW Figure 11. Toggle flow chart START READ DQ6 at Valid Address READ DQ5 & DQ6 at Valid Address DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 TWICE at Valid Address DQ6 = NO ...

Page 58

Registers Figure 12. Status Register Polling Flow Chart Start Read 1 DQ7=Valid Yes Data? No DQ5=1? Yes No Read1.DQ6 Read2.DQ6 Write Buffer Programming 58 Read 2 Read 3 Read 2 Read2.DQ6 Read3.DQ6 Read 3 Read2.DQ2 Read3.DQ2 DQ6 Yes Timeout failure ...

Page 59

Numonyx™ Axcell™ M29EW 8 Maximum Ratings Stressing the device above the rating listed in cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. These are stress ratings only and operation ...

Page 60

DC and AC Parameters 9 DC and AC Parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables that follow, are derived from tests ...

Page 61

Numonyx™ Axcell™ M29EW Table 20. Power-up wait timings Symbol Alt VCHVCQH ( VCHPH VCS ( VCQHPH VIOS t t PHEL PHWL 1. V and V ramps must be synchronized during power-up. ...

Page 62

DC and AC Parameters Table 21. Device capacitance Symbol Input capacitance for 256-Mbit and 512-Mbit C Input capacitance for 1-Gbit IN Input capacitance for 2-Gbit (1-Gbit/1-Gbit) C Output capacitance OUT 1. Sampled only, not 100% tested. Table 22. DC characteristics ...

Page 63

Numonyx™ Axcell™ M29EW 1. The maximum input leakage current is 2. Sampled only, not 100% tested. Figure 16. Random Read AC waveforms (8-bit mode) A0-AMAX/A-1 CE# OE# DQ0-DQ15 BYTE# tELBL Figure 17. Random Read AC waveforms (16-bit mode) A0-AMAX CE# ...

Page 64

DC and AC Parameters Figure 18. BYTE# Transition AC Waveform A0-A MAX A–1 BYTE# DQ0-DQ7 DQ8-DQ15 Figure 19. Page Read AC waveforms (16-bit mode) A4-Amax A0-A3 VALID tAVQV CE# tELQV OE# tGLQV DQ0-DQ15 Table 23. Read AC characteristics Symbol Alt. ...

Page 65

Numonyx™ Axcell™ M29EW Table 23. Read AC characteristics Symbol Alt. Parameter Chip Enable Low to Output t t ELQV E Valid Output Enable Low to ( GLQX OLZ Output Transition Output Enable Low GLQV OE ...

Page 66

DC and AC Parameters Program command the address of the memory location to be programmed the data to be programmed. 3. DQ7 is the complement of the data bit being programmed to DQ7 (see 4. ...

Page 67

Numonyx™ Axcell™ M29EW Figure 21. Write Enable Controlled Program waveforms (16-bit mode) tAVAV A0-Amax tELWL CE# tGHWL OE# tWLWH WE# tDVWH DQ0-DQ15 1. Only the third and fourth cycles of the Program command are represented. The Program command is followed ...

Page 68

... WHRL BUSY High to Chip Enable Low VCHEL VCS CC 1. This specification must be complied with by customer’s writing timing. Any violation to this timing specification may damage the flash device permanently. 2. Sampled only, not 100% tested. 68 Parameter Limit Min Min Min Min Min ...

Page 69

Numonyx™ Axcell™ M29EW Figure 22. Chip Enable Controlled Program waveforms (8-bit mode) A0-Amax/A–1 WE# OE# CE# DQ0-DQ7 1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check of Status ...

Page 70

DC and AC Parameters Figure 23. Chip Enable Controlled Program waveforms (16-bit mode) A0-Amax WE# OE# CE# DQ0-DQ15 1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check of ...

Page 71

Numonyx™ Axcell™ M29EW Figure 24. Chip/Block Erase waveforms (8-bit mode) tAVAV A0-Amax/A-1 tELWL CE# tGHWL OE# tWLWH WE# tDVWH DQ0-DQ7 1. For a Chip Erase command, addresses and data are 555h and 10h, respectively, while they are BAd and 30h ...

Page 72

DC and AC Parameters Figure 25. Reset AC waveforms (no program/erase in progress) RY/BY# CE#, OE# RST# tPLPH Figure 26. Reset during program/erase operation AC waveforms RY/BY# CE#,OE# RST# Table 26. Reset AC characteristics Symbol Alt. ( RST# ...

Page 73

Numonyx™ Axcell™ M29EW Figure 27. Accelerated program timing waveforms V PPH V PP /WP tVHVPP Figure 28. Data polling AC waveforms tWHEH CE# OE# WE# DQ7 DATA DQ6-DQ0 DATA RY/BY# 1. DQ7 returns valid data ...

Page 74

DC and AC Parameters Figure 29. Toggle/Alternative Toggle bit polling AC waveforms (8-bit mode) A0-Amax/A-1 CE# tWHGL2 WE# OE# tWHDX DQ6/DQ2 Data RY/BY# 1. DQ6 stops toggling when the ongoing Program or Erase command is completed. DQ2 stops toggling when ...

Page 75

Numonyx™ Axcell™ M29EW 10 Programming and Erase Performance Table 28. Programming and Erase Performance Parameter Block Erase (128 kbytes) Erase Suspend latency time Block Erase time-out Single Byte Program Byte Write to Buffer Program Byte Program Effective Write to Buffer ...

Page 76

Package Mechanical Specifications 11 Package Mechanical Specifications Numonyx offers these devices in lead-free TSOP, lead-free Fortified BGA, and leaded Fortified BGA packages. The category of second level interconnect is marked on the package and on the inner box label, in ...

Page 77

Numonyx™ Axcell™ M29EW Figure 31. Fortified BGA64 active ball array, package outline E BALL "A1" 1. Drawing is not to scale. 2. Drawing is bottom view. Table 30. Fortified BGA64 11 x ...

Page 78

... NOR Parallel Interface Device Density 256=256-Mbit 512=512-Mbit 00A=1-Gbit 00B=2-Gbit Device Type M29EW = 3V core, page, uniform block flash memory Device function H = highest block protected lowest block protected Device features * = Random digit to cover a combination of features, including packing media, special features, and specific customer request information. ...

Page 79

Numonyx™ Axcell™ M29EW Appendix A Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords ...

Page 80

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords ...

Page 81

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords ...

Page 82

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 ...

Page 83

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 ...

Page 84

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 185 ...

Page 85

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 201 202 203 204 205 206 207 208 209 210 211 212 213 214 215 216 217 218 219 ...

Page 86

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 235 236 237 238 239 240 241 242 243 244 245 246 247 248 249 250 251 252 253 ...

Page 87

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 269 270 271 272 273 274 275 276 277 278 279 280 281 282 283 284 285 286 287 ...

Page 88

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 303 304 305 306 307 308 309 310 311 312 313 314 315 316 317 318 319 320 321 ...

Page 89

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 337 338 339 340 341 342 343 344 345 346 347 348 349 350 351 352 353 354 355 ...

Page 90

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 371 372 373 374 375 376 377 378 379 380 381 382 383 384 385 386 387 388 389 ...

Page 91

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 405 406 407 408 409 410 411 412 413 414 415 416 417 418 419 420 421 422 423 ...

Page 92

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 439 440 441 442 443 444 445 446 447 448 449 450 451 452 453 454 455 456 457 ...

Page 93

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 473 474 475 476 477 478 479 480 481 482 483 484 485 486 487 488 489 490 491 ...

Page 94

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 507 508 509 510 511 512 513 514 515 516 517 518 519 520 521 522 523 524 525 ...

Page 95

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 541 542 543 544 545 546 547 548 549 550 551 552 553 554 555 556 557 558 559 ...

Page 96

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 575 576 577 578 579 580 581 582 583 584 585 586 587 588 589 590 591 592 593 ...

Page 97

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 609 610 611 612 613 614 615 616 617 618 619 620 621 622 623 624 625 626 627 ...

Page 98

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 643 644 645 646 647 648 649 650 651 652 653 654 655 656 657 658 659 660 661 ...

Page 99

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 677 678 679 680 681 682 683 684 685 686 687 688 689 690 691 692 693 694 695 ...

Page 100

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 711 712 713 714 715 716 717 718 719 720 721 722 723 724 725 726 727 728 729 ...

Page 101

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 745 746 747 748 749 750 751 752 753 754 755 756 757 758 759 760 761 762 763 ...

Page 102

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 779 780 781 782 783 784 785 786 787 788 789 790 791 792 793 794 795 796 797 ...

Page 103

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 813 814 815 816 817 818 819 820 821 822 823 824 825 826 827 828 829 830 831 ...

Page 104

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 847 848 849 850 851 852 853 854 855 856 857 858 859 860 861 862 863 864 865 ...

Page 105

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 881 882 883 884 885 886 887 888 889 890 891 892 893 894 895 896 897 898 899 ...

Page 106

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 915 916 917 918 919 920 921 922 923 924 925 926 927 928 929 930 931 932 933 ...

Page 107

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 949 950 951 952 953 954 955 956 957 958 959 960 961 962 963 964 965 966 967 ...

Page 108

Memory Address Table Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 983 984 985 986 987 988 989 990 991 992 993 994 995 996 997 998 999 1000 1001 ...

Page 109

Numonyx™ Axcell™ M29EW Table 33. Block Address Table for Descrete Device (Up to 1-Gbit) Block Size Block Number (Kbytes / Kwords) 1017 1018 1019 1020 1021 1022 1023 1. The 256-Mbit device consists of 256 blocks, from block 0 to ...

Page 110

... Common Flash Interface (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary ...

Page 111

... Maximum time-out for byte/word program = 2 typical time-out Maximum time-out for buffer program = 2 typical time-out Maximum time-out per individual block erase = 2 times typical time-out Maximum time-out for Chip Erase = 2 time-out 208045-10 Common Flash Interface (CFI) Value 2.7 V 3.6 V 11 µs 512 µs 1024 µ ...

Page 112

... Numonyx™ Axcell™ M29EW Description n in number of bytes Flash device interface code description Maximum number of bytes in multiple-byte n program or page= 2 Number of Erase block regions. It specifies the number of regions containing contiguous Erase blocks of the same size. Erase block region 1 information ...

Page 113

... HEX value in volts bit BCD value in 100 mV Top/bottom boot block flag xx = 04h: Uniform device, HW protection for lowest block xx = 05h: Uniform device, HW protection for highest block Program suspend not supported supported 208045-10 Common Flash Interface (CFI) (1) Required supported supported Uniform + V protecting ...

Page 114

Extended Memory Block Appendix C Extended Memory Block The M29EW has an extra block, the Extended Memory Block, that can be accessed using a dedicated command. This Extended Memory Block is 128words in x16 mode and 256bytes in x8 mode. ...

Page 115

Numonyx™ Axcell™ M29EW C.2 Customer-lockable Extended Memory Block A device where the Extended Memory Block is customer-lockable is delivered with the DQ7 bit set to ‘0’ and the Extended Memory Block unprotected the customer to program ...

Page 116

Revision History Appendix D Revision History Table 40. Document revision history Date Version May 2008 01 Oct 2008 02 Dec 2008 03 Mar 2009 04 Apr 2009 05 Jun 2009 06 Oct 2009 07 116 Changes Initial release Update t ...

Page 117

Numonyx™ Axcell™ M29EW Date Version Feb 2010 08 Apr 2010 09 May 2010 10 Changes Revised part numbers in the Table 32.: Valid Combinations of M29EW Part Numbers. Update programming performance specifications and suspend latency specifications in Table 28: Programming ...

Page 118

INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES ...

Related keywords