BTA16-600SW3G ON Semiconductor, BTA16-600SW3G Datasheet

no-image

BTA16-600SW3G

Manufacturer Part Number
BTA16-600SW3G
Description
Triacs ISO TO220 16A 10MA TRIAC
Manufacturer
ON Semiconductor
Datasheets

Specifications of BTA16-600SW3G

Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA16-600SW3G
Manufacturer:
ON Semiconductor
Quantity:
1
BTA16-600SW3G,
BTA16-800SW3G
Triacs
Silicon Bidirectional Thyristors
where high noise immunity and high commutating di/dt are required.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 0
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (T
Peak Gate Current (T
Peak Gate Power
(Pulse Width ≤ 20 ms, T
Average Gate Power (T
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, T
Designed for high performance full-wave ac control applications
C
Blocking Voltage to 800 V
On-State Current Rating of 16 A RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt − 250 V/ms minimum at 110°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt − 2 A/ms minimum at 110°C
Internally Isolated (2500 V
These are Pb−Free Devices*
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
J
= 25°C)
DRM
= −40 to 110°C, Sine Wave,
and V
J
= 25°C, t = 8.3 ms)
RRM
Rating
for all types can be applied on a continuous basis. Blocking
J
= 110°C, t ≤ 20 ms)
C
J
BTA16−600SW3G
BTA16−800SW3G
(T
= 110°C)
= 80°C)
J
A
= 25°C unless otherwise noted)
= 25°C)
C
RMS
= 25°C)
)
Symbol
I
P
V
V
V
T(RMS)
V
I
P
I
T
V
TSM
G(AV)
DRM,
DSM/
RRM
RSM
I
GM
T
GM
stg
2
iso
J
t
V
−40 to +110
−40 to +150
DSM/
Value
+100
2500
600
800
170
120
4.0
1.0
16
20
V
RSM
1
A
Unit
2
°C
°C
W
W
V
A
A
V
A
V
sec
*For additional information on our Pb−Free strategy and
BTA16−600SW3G
BTA16−800SW3G
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1
2
x
A
Y
WW
G
3
1
2
3
4
Device
MT2
ORDERING INFORMATION
600 thru 800 VOLTS
16 AMPERES RMS
4
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
http://onsemi.com
PIN ASSIGNMENT
CASE 221A
TO−220AB
STYLE 12
TRIACS
TO−220AB
TO−220AB
(Pb−Free)
(Pb−Free)
Package
Main Terminal 1
Main Terminal 2
Publication Order Number:
No Connection
Gate
BTA16−600SW3/D
BTA16−xSWG
G
MARKING
DIAGRAM
50 Units / Rail
50 Units / Rail
MT1
AYWW
Shipping

Related parts for BTA16-600SW3G

Related keywords