ADG419BN Analog Devices Inc, ADG419BN Datasheet - Page 3

• Manufacturer Part Number: ADG419BN
• Description: IC SWITCH SPDT 8DIP
• Manufacturer: Analog Devices Inc
• Series: LC²MOSr

Specifications of ADG419BN

• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Rohs Status: RoHS non-compliant
• Function: Switch
• Circuit: 1 x SPDT
• On-state Resistance: 35 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 5V, 12V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 85°C
• Peak Reflow Compatible (260 C): No
• Leakage Current: 0.1nA
• Leaded Process Compatible: No
• No. Of Channels: 1
• On Resistance Rds(on): 25mohm
• Current, Off Leakage: ±0.1 nA (Typ.) (Source) @ +25 °C, ±0.1 nA (Typ.) (Drain) @ +25 °C
• Current, On Leakage: ±0.4 nA (Typ.) (Channel) @ +25 °C
• Current, Supply: 0.0001 uA (Typ.) (Drain to Drain) @ +25 °C, 0.0001 uA (Typ.) (Source to Source) @ +25 °C
• On Resistance: 25 Ohms (Typ.) @ +25 °C
• Package Type: N-8
• Power Dissipation: 400 mW
• Switch Type: SPDT
• Temperature, Operating, Maximum: 85 °C
• Temperature, Operating, Minimum: -40 °C
• Voltage, Input, High Level: 2.4 V (Min.) @ -40 to +85 °C
• Voltage, Input, Low Level: 0.8 V (Max.) @ -40 to +85 °C
• Voltage, Supply: 44 V (Max.)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

SPECIFICATIONS
DUAL SUPPLY
V
Table 1.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C.
Guaranteed by design, not subject to production test.
DD
Analog Signal Range
R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
Break-Before-Make Time Delay, t
Off Isolation
Channel-to-Channel Crosstalk
C
C
I
I
I
DD
SS
L
TRANSITION
ON
S
D
= 15 V ± 10%, V
I
, C
(Off )
INL
S
or I
(On)
INH
1
SS
D
INL
= −15 V ± 10%, V
S
(Off )
INH
(Off )
D
, I
S
(On)
2
D
+25°C
25
35
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
160
30
5
80
90
6
55
0.0001
1
0.0001
1
0.0001
1
L
= 5 V ± 10%, GND = 0 V, unless otherwise noted.
−40°C to
+85°C
45
±5
±5
±5
2.4
0.8
±0.005
±0.5
200
2.5
2.5
2.5
B Version
200
−40°C to
+125°C
V
45
±15
±30
±30
2.4
0.8
±0.005
±0.5
2.5
2.5
2.5
Rev. B | Page 3 of 16
SS
to V
DD
+25°C
25
35
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
145
30
5
80
70
6
55
0.0001
1
0.0001
1
0.0001
1
T Version
−55°C to
+125°C
V
45
±15
±30
±30
2.4
0.8
±0.005
±0.5
200
2.5
2.5
2.5
SS
to V
DD
Unit
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns max
ns typ
ns min
dB typ
dB typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
μA typ
μA max
Test Conditions/Comments
V
V
V
V
see Figure 12
V
see Figure 12
V
V
R
V
R
V
R
R
f = 1 MHz
f = 1 MHz
V
V
V
L
L
L
L
D
DD
DD
D
D
S
IN
S2
S1
DD
IN
L
= 300 Ω, C
= 300 Ω, C
= 50 Ω, f = 1 MHz; see Figure 16
= 50 Ω, f = 1 MHz; see Figure 17
= 5.5 V
= V
= ±12.5 V, I
= ±15.5 V, V
= ±15.5 V, V
= V
= 0 V or 5 V
= ∓10 V; see Figure 14
= V
= +13.5 V, V
= +16.5 V, V
= +16.5 V, V
D
INL
S2
= ±15.5 V; see Figure 13
= ±10 V; see Figure 15
or V
INH
L
L
S
= 35 pF; V
= 35 pF;
S
S
= −10 mA
SS
SS
SS
= ∓15.5 V;
= ∓15.5 V;
= −13.5 V
= −16.5 V
= −16.5 V
ADG419
S1
= ±10 V,