ADG419BN Analog Devices Inc, ADG419BN Datasheet - Page 2

• Manufacturer Part Number: ADG419BN
• Description: IC SWITCH SPDT 8DIP
• Manufacturer: Analog Devices Inc
• Series: LC²MOSr

Specifications of ADG419BN

• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Rohs Status: RoHS non-compliant
• Function: Switch
• Circuit: 1 x SPDT
• On-state Resistance: 35 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 5V, 12V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 85°C
• Peak Reflow Compatible (260 C): No
• Leakage Current: 0.1nA
• Leaded Process Compatible: No
• No. Of Channels: 1
• On Resistance Rds(on): 25mohm
• Current, Off Leakage: ±0.1 nA (Typ.) (Source) @ +25 °C, ±0.1 nA (Typ.) (Drain) @ +25 °C
• Current, On Leakage: ±0.4 nA (Typ.) (Channel) @ +25 °C
• Current, Supply: 0.0001 uA (Typ.) (Drain to Drain) @ +25 °C, 0.0001 uA (Typ.) (Source to Source) @ +25 °C
• On Resistance: 25 Ohms (Typ.) @ +25 °C
• Package Type: N-8
• Power Dissipation: 400 mW
• Switch Type: SPDT
• Temperature, Operating, Maximum: 85 °C
• Temperature, Operating, Minimum: -40 °C
• Voltage, Input, High Level: 2.4 V (Min.) @ -40 to +85 °C
• Voltage, Input, Low Level: 0.8 V (Max.) @ -40 to +85 °C
• Voltage, Supply: 44 V (Max.)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ADG419–SPECIFICATIONS
Dual Supply
Parameter
ANALOG SWITCH
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
LEAKAGE CURRENTS
Temperature ranges are as follows: B Version: –40 C to +85 C; T Version: –55 C to +125 C.
Guaranteed by design, not subject to production test.
Analog Signal Range
R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
Break-Before-Make Time
Delay, t
OFF Isolation
Channel-to-Channel Crosstalk
C
C
I
I
I
TRANSITION
DD
SS
L
ON
S
D
I
, C
INL
(OFF)
S
or I
(ON)
D
INH
(V
DD
D
INL
INH
= +15 V
S
D
(OFF)
(OFF)
, I
S
(ON)
2
10%, V
+25 C
25
35
160
30
5
80
90
6
55
0.0001
1
0.0001
1
0.0001
1
SS
0.1
0.25
0.1
0.75
0.4
0.75
= –15 V
B Version
1
–40 C to
+85 C
V
45
2.4
0.8
200
2.5
2.5
2.5
10%, V
5
5
5
0.005
0.5
SS
to V
L
DD
= +5 V
–2–
+25 C
25
35
145
30
5
80
70
6
55
0.0001
1
0.0001
1
0.0001
1
0.1
0.25
0.1
0.75
0.4
0.75
10%, GND = 0 V, unless otherwise noted)
T Version
–55 C to
+125 C
V
45
2.4
0.8
200
2.5
2.5
2.5
15
30
30
0.005
0.5
SS
to V
DD
Units
V
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
ns max
ns typ
ns min
dB typ
dB typ
pF typ
pF typ
A typ
A max
A typ
A max
A typ
A max
A typ
A max
typ
max
Test Conditions/Comments
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
Test Circuit 3
V
R
V
Test Circuit 4
R
V
Test Circuit 5
R
Test Circuit 6
R
Test Circuit 7
f = 1 MHz
f = 1 MHz
V
V
V
D
DD
DD
D
D
S
IN
L
S1
L
S1
L
L
DD
IN
L
= V
= 300 , C
= 300 , C
= 50 , f = 1 MHz;
= 50 , f = 1 MHz;
= +5.5 V
= 12.5 V, I
= 15.5 V, V
= 15.5 V, V
= V
= 10 V, V
= V
= 0 V or 5 V
= +16.5 V, V
= +13.5 V, V
= +16.5 V, V
D
S2
INL
= 15.5 V;
= 10 V;
or V
L
L
S2
INH
S
= 35 pF;
= 35 pF;
S
S
= –10 mA
=
SS
SS
=
=
SS
= –16.5 V
= –13.5 V
= –16.5 V
10 V;
15.5 V;
15.5 V;
REV. A