M25P32-VMF6TP Micron Technology Inc, M25P32-VMF6TP Datasheet - Page 20
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
M25P32-VMF6TP
Manufacturer Part Number
M25P32-VMF6TP
Description
Manufacturer
Micron Technology Inc
Datasheet
1.M25P32-VMF6TP.pdf
(53 pages)
Specifications of M25P32-VMF6TP
Cell Type
NOR
Density
32Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
SO W
Program/erase Volt (typ)
8.5 to 9.5V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
4M
Supply Current
12mA
Mounting
Surface Mount
Pin Count
16
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P32-VMF6TP
Manufacturer:
Numonyx
Quantity:
8 000
Company:
Part Number:
M25P32-VMF6TP
Manufacturer:
ST
Quantity:
320
Part Number:
M25P32-VMF6TP
Manufacturer:
MICRON/美光
Quantity:
20 000
6
20/54
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most
significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in
Every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read),
Read Status Register (RDSR), Read Identification (RDID) or Release from Deep Power-
down, and Read Electronic Signature (RES) instruction, the shifted-in instruction sequence
is followed by a data-out sequence. Chip Select (S) can be driven High after any bit of the
data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status
Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP)
instruction, Chip Select (S) must be driven High exactly at a byte boundary, otherwise the
instruction is rejected, and is not executed. That is, Chip Select (S) must driven High when
the number of clock pulses after Chip Select (S) being driven Low is an exact multiple of
eight.
All attempts to access the memory array during a Write Status Register cycle, Program
cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program
cycle or Erase cycle continues unaffected.
Table
4.