DG411LDY-E3 Vishay, DG411LDY-E3 Datasheet - Page 10

• Manufacturer Part Number: DG411LDY-E3
• Description: IC SWITCH QUAD SPST LV 16-SOIC
• Manufacturer: Vishay
• Type: Analog Switchr

Specifications of DG411LDY-E3

• Function: Switch
• Circuit: 4 x SPST - NC
• On-state Resistance: 30 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 2.7 V ~ 12 V, ± 3 V ~ 6 V
• Current - Supply: -1µA, 1&microA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Number Of Switches: Quad
• Switch Configuration: SPST
• On Resistance (max): 80 Ohms
• On Time (max): 85 ns
• Off Time (max): 60 ns
• Off Isolation (typ): - 68 dB
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Supply Current: 0.00002 mA
• Maximum Power Dissipation: 650 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 30 mA
• Analog Switch Type: SPST
• No. Of Channels: 4
• On State Resistance Max: 33ohm
• Turn Off Time: 35ns
• Turn On Time: 50ns
• Supply Voltage Range: 2.7V To 12V
• Operating Temperature Range: -40°C To +85°C
• Package: 16SOIC N
• Maximum On Resistance: 80@2.7V Ohm
• Maximum High Level Output Current: 30 mA
• Maximum Turn-off Time: 60@3V ns
• Maximum Turn-on Time: 85@3V ns
• Switch Architecture: SPST
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

DG411L, DG412L, DG413L
Vishay Siliconix
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71397.
www.vishay.com
10
V
V
g
S
R
g
= 50
0 V, 2.4 V
Ω
3 V
R
g
C
S
IN
Figure 6. Off-Isolation
S
IN
GND
Off Isolation = 20 log
GND
V
V
V
V
C = RF Bypass
L
L
L
L
C = RF bypass
X
TALK
V-
V-
V+
V+
Isolation = 20 log
V+
V+
V-
V-
V
D
D
S
C
R
V
V
O
g
S
C
= 50
0 V , 2.4 V
0 V, 2.4 V
10 nF
Ω
C
R
50
L
V
L
V
V
O
Ω
Figure 4. Charge Injection
NC
S
O
V
O
C
Figure 5. Crosstalk
S
IN
S
IN
1
2
1
2
V
V
GND
L
L
0 V, 2.4 V
IN
by sense of switch.
X
dependent on switch configuration Input polarity determined
C
IN
C
V -
V-
V+
V+
GND
IN
IN
V
V
V
D
D
L
L
O
X
X
1
2
Figure 7. Source/Drain Capacitances
OFF
OFF
C
V -
V-
V+
V+
C
50
R
S
D
L
Ω
V
Q = ΔV
O
S11-0179-Rev. F, 07-Feb-11
ON
ON
C
Document Number: 71397
O
x C
L
or Equivalent
Impedance
HP4192A
Analyzer
Meter
OFF
OFF
ΔV
O