BCP5610TA Diodes Zetex, BCP5610TA Datasheet - Page 2

• Manufacturer Part Number: BCP5610TA
• Description: TRANS NPN 80V 1A 2W SOT223
• Manufacturer: Diodes Zetex
• Series: -r

Specifications of BCP5610TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (max): -
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Thermal Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
Notes:
BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
4. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
when operating in a steady-state condition.
Characteristic
Characteristic
@ T
A
= 25°C unless otherwise specified
@ T
A
= 25°C unless otherwise specified
Symbol
V
V
V
I
I
CBO
CEO
EBO
I
CM
BM
I
C
B
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Symbol
T
BCP54
J,
R
R
P
T
θJA
45
45
θJL
D
STG
BCP55
100
200
60
60
5
1
2
-65 to +150
Value
19.4
62
2
BCP56
100
80
BCP 54 / 55 / 56
© Diodes Incorporated
°C/W
°C/W
Unit
Unit
mA
°C
W
V
V
V
A
June 2011