PI2PCIE2212ZHE Pericom Semiconductor, PI2PCIE2212ZHE Datasheet - Page 2

• Manufacturer Part Number: PI2PCIE2212ZHE
• Description: IC MUX/DEMUX 2X1 28VQFN
• Manufacturer: Pericom Semiconductor

Specifications of PI2PCIE2212ZHE

• Function: Multiplexer/Demultiplexer
• Circuit: 4 x 2:1
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.5 V ~ 1.8 V
• Current - Supply: 200µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-VQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Power Supply Characteristics
Notes:
1.
DC Electrical Characteristics
Notes:
1.
Dynamic Electrical Characteristics
Notes:
1.
2.
I
Parameter Description
X
O
I
BW
V
P-1dB
V
V
V
I
I
V
Parameter
Parameters
Storage Temperature ......................................... –65°C to +150°C
Supply Voltage to Ground Potential .................... –0.5V to +2.5V
DC Input Voltage ................................................. –0.5V to +V
DC Output Current ........................................................... 120mA
Power Dissipation ................................................................ 0.5W
CC
LOSS
IH
IL
TALK
IRR
If
IH
IL
IK
IDC
Typical values are at V
Typical values are at V
Typical values are at V
Guaranteed by design.
09-0080
Input HIGH Voltage Control Input, SEL
Input LOW Voltage Control Input, SEL
Clamp Diode Voltage Control Input, SEL V
Input HIGH Current Control Input, SEL
Input LOW Current Control Input, SEL
DC Signal Voltage Range, Channel I/O
(Ax, Bx, Cx)
Crosstalk
OFF Isolation
Differential
Insertion Loss
Bandwidth -3dB
Max Signal Fre-
quency Range
1 dB Compression
Input Signal
Quiescent Power Supply Current
DD
DD
DD
= 1.8V, T
= 1.8V, T
= 1.8V, T
Description
Description
A
A
A
Test Conditions
f = 2.5 GHz
f = 2.5 GHz
f= 2.5 GHz
Insertion loss 1.5 dB, V
Insertion loss 1.5 dB, V
Insertion loss 3.0 dB, V
Insertion loss 3.0 dB, V
RL = 50, f = 625MHz, Sinewave, DC = 0V
RL = 50, f = 625MHz, Sinewave, DC = 0.45V
RL = 50, f = 625MHz, Sinewave, DC = 0.9V
= 25°C ambient and maximum loading.
= 25°C ambient and maximum loading.
= 25°C ambient and maximum loading.
(T
A
= –40°C to +85°C, V
(2)
(T A = -40º to +85ºC, V DD = 1.5V to 1.8V)
V
DD
Guaranteed HIGH level
Guaranteed LOW level
V
V
V
V
ohms
DD
DD
DD
O
O
= Max., V
IN
IN
IN
IN
/V
/V
Test Conditions
DD
= Max., I
= Max., V
= Max., V
DD
I
I
= 0.6Vpp, DC = 0V
= 0.6Vpp, DC = 0.9V
= 0.6Vpp, DC = 0V
= 0.6Vpp, DC = 0.9V
> 95%, R
> 80%, R
2
= 1.5V to 1.8V)
Test Conditions
Note:
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specifi cation
is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
IN
IN
IN
IN
= GND or V
L
L
Stresses greater than those listed under MAXIMUM RATINGS
= –18mA
= V
= GND
=10K
=50-
DD
2:1 Mux/DeMux Switch w/ Single Enable
DD
0.65 x V
Min.
Min.
-0.5
-0.4
-0.3
2.5
2.5
4.0
4.0
1.2
2.0
2.4
-
-
-
Min.
DD
PCI Express
Typ.
Typ.
-2.0
-0.7
-38
-25
3.8
Typ.
-
-
-
-
(1)
200
(1)
(1)
0.35 x V
Max.
PS8971B
Max.
PI2PCIE2212
-1.2
2.4
2.0
Max.
±5
±5
®
400
-
2.0, 1-Lane
DD
Units
GHz
Vpp
Units
Units
dB
μA
μA
11/09/09
V
V