DG613DJ-E3 Vishay, DG613DJ-E3 Datasheet - Page 4
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DG613DJ-E3
Manufacturer Part Number
DG613DJ-E3
Description
IC SWITCH QUAD NO/NC 16-DIP
Manufacturer
Vishay
Datasheet
1.DG611DY-T1-E3.pdf
(10 pages)
Specifications of DG613DJ-E3
Bandwidth
500 MHz
Function
Switch
Circuit
1 x DPDT
On-state Resistance
45 Ohm
Voltage Supply Source
Single, Dual Supply
Voltage - Supply, Single/dual (±)
10 V ~ 18 V, ±10 V ~ 15 V
Current - Supply
-1µA, 1µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Number Of Switches
Quad
Switch Configuration
SPST
On Resistance (max)
60 Ohms
On Time (max)
35 ns
Off Time (max)
25 ns
Off Isolation (typ)
- 74 dB
Supply Voltage (max)
21 V
Supply Voltage (min)
5 V
Supply Current
0.000005 mA
Maximum Power Dissipation
470 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Switch Current (typ)
+/- 30 mA
Analog Switch Type
SPST
No. Of Channels
4
On State Resistance Max
18ohm
Turn Off Time
16ns
Turn On Time
19ns
Supply Voltage Range
5V To 21V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DG613DJ-E3
Manufacturer:
Vishay
Quantity:
3 077
DG611, DG612, DG613
Vishay Siliconix
www.vishay.com
4
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Switch On-Resistance
Resistance Match Bet Ch.
Source Off Leakage
Drain Off Leakage Current
Switch On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Off State Input Capacitance
Off State Output Capacitance
On State Input Capacitance
Bandwidth
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
Charge Injection
Ch. Injection Change
Off Isolation
Crosstalk
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
e
e
e
e
e
e,g
e
a
V
R
Symbol
R
ANALOG
C
C
C
X
OIRR
I
I
I
I
DS(on)
t
t
S(off)
D(off)
D(on)
C
BW
V
t
t
Q
GND
V
S(off)
D(off)
S(on)
OFF
OFF
TALK
DS(on)
I
ON
ON
Q
I+
I
IN
I-
IH
IN
L
IL
Unless Otherwise Specified
V
See test circuit, figure 2
R
See test circuit, figure 2
R
R
R
I
V+ = 15 V, V- = - 3 V
L
V- = - 5 V, V+ = 12 V
C
L
S
V
V
C
L
IN
IN
L
= 5 V, V
Test Conditions
= 300 C
S
S
= - 1 mA, V
L
V
= 300 C
V
V
= 1 nF,
= 50 R
= 10 , R
= 0 V, V
= 10 V, V
= 1 nF, V
IN
S
S
V
V
R
f = 5 MHz
f = 5 MHz
V
V
= 0 V or 5 V
S
S
= V
= V
L
D
S
= ± 2 V,
= ± 2 V,
= 50
IN
= 0 V
= 0 V
D
D
|
V
D
= 4 V, 1 V
= 0 V
= 0 V
L
S
D
S
L
L
L
D
= 10 V
|
= 75 pF
= 0 V
= 50
= 50
= 0 V
= 3 pF
3 V
= 0 V
f
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Hot
Hot
Hot
Hot
b
± 0.001
± 0.001
± 0.001
- 0.005
- 0.005
Typ.
0.005
0.005
0.005
500
18
10
12
19
16
74
87
2
5
3
2
8
4
3
c
- 55 °C to 125 °C
- 0.25
- 0.25
Min.
- 0.4
- 20
- 20
- 40
- 20
- 5
- 1
- 1
- 5
- 1
- 5
4
A Suffix
d
Max.
0.25
0.25
0.4
45
60
20
20
40
20
25
20
35
50
25
35
1
1
4
1
5
1
5
7
S11-0154-Rev. I, 31-Jan-11
Document Number: 70057
d
- 40 °C to 85 °C
Min.
- 0.25
- 0.25
- 0.4
- 20
- 20
- 40
- 20
- 5
- 1
- 1
- 5
- 1
- 5
4
D Suffix
d
Max.
0.25
0.25
0.4
45
60
20
20
40
20
25
20
35
50
25
35
7
1
1
4
1
5
1
5
d
Unit
MHz
nA
µA
pF
pF
pC
dB
µA
ns
V
V