JAN1N5811 MICROSEMI, JAN1N5811 Datasheet

JAN1N5811

Manufacturer Part Number

JAN1N5811

Description

DIODE SWITCHING 150V 6A 2-PIN E-MELF

Manufacturer

MICROSEMI

Datasheets

1.JANTX1N5807.pdf (3 pages)

2.JAN1N5811.pdf (3 pages)

Current page: 1 of 3
Download datasheet (50Kb)

FEATURES:

ELECTRICAL CHARACTERISTICS:

REVERSE RECOVERY CHARACTERISTICS:

ELECTRICAL CHARACTERISTICS:

REVERSE RECOVERY CHARACTERISTICS:

MSC1345.PDF 02-23-99

JANHCE1N5807

JANHCE1N5809

JANHCE1N58011

JANKCE1N5807

JANKCE1N5809

JANKCE1N58011

Reverse Current

Rated V

Reverse Current

Rated V

Forward Voltage Drop I

Junction Capacitance @ V

Reverse Recovery Time

Forward Recovery Voltage @ 1A Tr = 8ns

Forward Recovery Time

= 1A, I

Chip Outline Dimensions: 68 x 68 mils

Chip Thickness: 8 to 12 mils

Anode Metallization: Aluminum

Metallization Thickness: 70,000Ã Ã Nominal

Bonding Area: 42 x 42 mils Min.

Back Metallization: Gold-3000Ã Ã Nominal

Junction Passivated with Thermal Silicon Dioxide - Planar Design

Backside Available with Solderable Ag Backside as JANHCF or

JANKCF

TYPE

= 500 mA

, T

= 1A, I

CHARACTERISTIC

= 25 C

= 100 C

= 0.1A

100V

150V

100V

150V

50V

= 4A, T

= 10V

110V

160V

110V

160V

= 25 C

60V

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

Tj = 75 C

6.0A

SYMBOL

Trr

Vrr

TYPICAL

.01

1.0

.84

2.5

1.5

JANHCE and JANKCE

JANHCF and JANKCF

FAST RECOVERY

RECTIFIER CHIP

50 - 150 VOLTS

MAX.

Chip Type: RA

.875

150

2.2

6 AMPS

1N5807

1N5809

1N5811

UNITS

Volts

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