LM3450AEV230V30/NOPB National Semiconductor, LM3450AEV230V30/NOPB Datasheet - Page 6

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LM3450AEV230V30/NOPB

Manufacturer Part Number
LM3450AEV230V30/NOPB
Description
LM3450A EVAL BOARD 230V30
Manufacturer
National Semiconductor
Series
PowerWise®r
Datasheet

Specifications of LM3450AEV230V30/NOPB

Current - Output / Channel
700mA
Outputs And Type
1, Non-Isolated
Voltage - Output
50V
Features
-
Voltage - Input
180 ~ 265VAC
Utilized Ic / Part
LM3450A
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
www.national.com
THERMAL SHUTDOWN
THERMAL RESISTANCE
θ
θ
Symbol
JA
JC
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation
of the device is guaranteed and do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical
Characteristics table. All voltages are with respect to the potential at the GND pin, unless otherwise specified.
Note 2: Refer to National’s packaging website for more detailed information and mounting techniques. http://www.national.com/analog/packaging/
Note 3: Human Body Model, applicable std. JESD22-A114-C. Machine Model, applicable std. JESD22-A115-A. Field Induced Charge Device Model, applicable
std. JESD22-C101-C.
Note 4: All limits guaranteed at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits are 100%
production tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. All limits are used
to calculate Average Outgoing Quality Level (AOQL).
Note 5: Typical numbers are at 25°C and represent the most likely norm.
Note 6: These electrical parameters are guaranteed by design, and are not verified by test.
Note 7: Junction-to-ambient thermal resistance is highly board-layout dependent. In applications where high maximum power dissipation exists, namely driving
a large MOSFET at high switching frequency from a high input voltage, special care must be paid to thermal dissipation issues during board design. In high-power
dissipation applications, the maximum ambient temperature may have to be derated. Maximum ambient temperature (T
operating junction temperature (T
junction-to ambient thermal resistance of the package in the application (θ
Thermal Limit Threshold
Thermal Limit Hysteresis
Junction to Ambient
Junction to Case
Parameter
J-MAX-OP
= 125°C for Q1, or 150°C for Q0), the maximum power dissipation of the device in the application (P
(Note
TSSOP-16
(Note
Conditions
6)
6,
Note
JA
), as given by the following equation: T
6
7)
(Note
Min
4)
(Note
38.0
10.0
Typ
160
20
A-MAX
5)
A-MAX
= T
J-MAX-OP
) is dependent on the maximum
(Note
Max
– (θ
JA
4)
× P
D-MAX
D-MAX
).
), and the
Units
°C/W
°C

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