VESD05A1B-02V-G-08 Vishay, VESD05A1B-02V-G-08 Datasheet - Page 2

• Manufacturer Part Number: VESD05A1B-02V-G-08
• Description: TVS DIODE 5V 33W SOD523
• Manufacturer: Vishay
• Series: -r

Specifications of VESD05A1B-02V-G-08

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6V
• Power (watts): 33W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: VESD05A1B-02V-G-08TR

VESD05A1B-02V
Vishay Semiconductors
BiAs-MODE (bidirectional asymmetrical protection mode)
With the VESD05A1B-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (V
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the
protection diode. The low forward voltage (V
Due to the different clamping levels in forward and reverse direction the VESD05A1B-02V clamping behaviour is bidirectional
and asymmetrical (BiAs).
Note
•
Document Number: 83368
Rev. 1.0, 08-Nov-10
ELECTRICAL CHARACTERISTICS VESD05A1B-02V
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 and pin 2).
C
) is defined by the breakthrough voltage (V
20280
L1
Number of lines which can be protected
Ground
TEST CONDITIONS/REMARKS
For technical questions, contact:
at V
at V
at I
at I
Single ESD-Protection Diode in
R
R
F
at I
PP
PP
at I
= 2.5 V; f = 1 MHz
at I
) clamps the negative transient close to the ground level.
at V
at I
at I
= 0 V; f = 1 MHz
PP
R
= I
= I
R
PP
PP
R
= 1 mA
= 1 µA
= 0.2 A
PPM
PPM
= 5 V
= 1 A
= 1 A
= 3 A
= 3 A
SOD-523
[e-mail]
BR
) level plus the voltage drop at the series impedance
SYMBOL
N
V
channel
V
C
RWM
V
V
I
BR
R
C
F
D
MIN.
5
6
-
-
-
-
-
-
-
-
-
TYP.
0.01
0.95
6.8
8.9
1.3
1.9
19
12
BiAs
8
-
-
RWM
) the protection diode
MAX.
0.1
7.5
9.5
1.2
11
23
1
-
-
-
-
www.vishay.com
UNIT
lines
µA
pF
pF
V
V
V
V
V
V
V
2