SI4707-B20-GM Silicon Laboratories Inc, SI4707-B20-GM Datasheet - Page 4

• Manufacturer Part Number: SI4707-B20-GM
• Description: IC RX FM/WB RADIO 20QFN
• Manufacturer: Silicon Laboratories Inc
• Series: -r

Specifications of SI4707-B20-GM

• Frequency: 162.4MHz ~ 162.55MHz
• Sensitivity: -
• Data Rate - Maximum: -
• Modulation Or Protocol: WB
• Applications: General Purpose
• Current - Receiving: 19.1mA
• Data Interface: PCB, Surface Mount
• Memory Size: -
• Antenna Connector: PCB, Surface Mount
• Features: -
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-UFQFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-2147; SI4707-B20-GM

Si4707-B20
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
4
Supply Voltage
Interface Supply Voltage
Power Supply Powerup Rise Time
Interface Power Supply Powerup Rise Time
Ambient Temperature
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Supply Voltage
Interface Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The Si4707 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV HBM.
3. For input pins SCLK, SEN, SDIO, RST, RCLK, GPO1, GPO2, and GPO3.
4. At RF input pins, FMI.
Typical values apply at VDD = 3.3 V and 25 °C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
Handling and assembly of these devices should only be done at ESD-protected workstations.
3
3
Parameter
4
Parameter
1,2
Symbol
T
V
Symbol
V
V
T
V
V
I
STG
DDRISE
OP
IORISE
DD
IN
V
IO
IN
V
Rev. 0.8
T
DD
IO
A
Test Condition
–0.3 to (VIO + 0.3)
–0.5 to 5.8
–0.5 to 3.9
–55 to 150
–40 to 95
Value
0.4
10
Min
–20
2.7
1.5
10
10
Typ
25
—
—
—
—
Max
5.5
3.6
85
—
—
Unit
V
mA
°C
°C
V
V
V
pK
Unit
µs
µs
°C
V
V