ADG1221BRMZ Analog Devices Inc, ADG1221BRMZ Datasheet - Page 3

• Manufacturer Part Number: ADG1221BRMZ
• Description: IC SWITCH DUAL SPST 10MSOP
• Manufacturer: Analog Devices Inc
• Series: iCMOS®r

Specifications of ADG1221BRMZ

• Function: Switch
• Circuit: 2 x SPST - NO
• On-state Resistance: 270 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 10.8 V ~ 13.2 V, ±15 V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
• Analogue Switch Type: SPST
• No. Of Channels: 2
• Bandwidth: 960MHz
• On State Resistance Max: 200ohm
• Turn Off Time: 85ns
• Turn On Time: 130ns
• Supply Voltage Range: 10.8V To 13.2V, ± 13.5V To ± 16.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPECIFICATIONS
DUAL SUPPLY
V
Table 1.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
DD
Analog Signal Range
On Resistance, R
On Resistance Match
On Resistance Flatness, R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
t
t
Break-Before-Make Time Delay
Charge Injection, Q
Off Isolation
ON
OFF
= 15 V ± 10%, V
Between Channels, ∆R
(ADG1223 Only), t
INL
ON
or I
SS
INJ
D
INL
INH
= –15 V ± 10%, GND = 0 V, unless otherwise noted.
BBM
S
(Off )
D
INH
(Off )
, I
FLAT(ON)
S
(On)
1
ON
IN
25°C
120
200
2.5
6
20
64
±0.002
±0.1
±0.002
±0.1
±0.01
±0.2
0.005
2.5
130
170
85
105
40
0.1
75
–40°C to +85°C
240
10
76
±0.6
±0.6
±0.6
210
130
Temperature
Rev. A | Page 3 of 16
–40°C to +125°C
V
270
12
83
±1
±1
±1
2.0
0.8
±0.1
240
140
10
DD
to V
SS
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
ADG1221/ADG1222/ADG1223
Test Conditions/Comments
V
V
V
V
V
V
V
V
V
R
(see Figure 26)
R
(see Figure 26)
R
(see Figure 27)
V
R
(see Figure 29)
DD
S
S
S
DD
S
S
S
IN
L
L
L
S
L
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= ±10 V, I
= ±10 V, I
= –5 V/0 V/+5 V; I
= ±10 V, V
= ±10 V, V
= V
= 0 V, R
= V
= +13.5 V, V
= +16.5 V, V
D
INL
= ±10 V (see Figure 25)
or V
S
= 0 Ω, C
L
S
S
D
D
INH
L
L
L
= 1 pF, f = 1 MHz
= –1 mA (see Figure 23)
= –1 mA
= ±10 V (see Figure 24)
= ±10 V (see Figure 24)
= 35 pF, V
= 35 pF, V
= 35 pF, V
SS
SS
= –13.5 V,
= –16.5 V
L
S
= 1 nF (see Figure 28)
= –1 mA
S
S
S1
= 10 V
= 10 V
= V
S2
= 10 V