IR333C Everlight Electronics Co Ltd, IR333C Datasheet
IR333C
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IR333C Summary of contents
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... RoHS compliant version. Descriptions ․EVERLIGHT’S Infrared Emitting Diode(IR333C/H2 high intensity diode , molded in a water clear plastic package. ․The device is spectrally matched with phototransistor , photodiode and infrared receiver module. Applications ․ ...
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... Conditions--Pulse Width≦100μs and Duty≦1%. FP *2:Soldering time≦5 seconds. Everlight Electronics Co., Ltd. Device No：DIR-033-017 Symbol Rating I 100 -40 ~ +85 opr T -40 ~ +100 stg T 260 sol P 150 d http:\\www.everlight.com Prepared date：07-20-2005 IR333C/H2 Units ℃ ℃ ℃ mW Rev 3 Page Prepared by：Jaine Tsai ...
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... F I =20mA F I =20mA F I =100mA F Pulse Width≦100μs and Duty≦1% I =1A F Pulse Width≦100μs and Duty≦ =20mA 11.0 17.6 http:\\www.everlight.com Prepared date：07-20-2005 IR333C/H2 Min. Typ. Max. Units 7 mW/sr -- 700 -- -- nm -- 940 1.2 1.5 -- 1.4 1 ...
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... Fig.3 Peak Emission Wavelength Ambient Temperature 980 960 940 920 900 - Everlight Electronics Co., Ltd. Device No：DIR-033-017 Fig.2 Spectral Distribution 100 Fig.4 Forward Current vs. Forward Voltage 50 75 100 http:\\www.everlight.com Prepared date：07-20-2005 IR333C/H2 100 Rev 3 Prepared by：Jaine Tsai I =20mA F Ta=25° C ...
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... I =20mA F 100 120 http:\\www.everlight.com Prepared date：07-20-2005 Fig.6 Relative Radiant Intensity vs. Angular Displacement - -10 1.0 0.6 0.4 0.2 0 0.2 0.4 0.6 Fig.8 Forward Voltage vs. Ambient Temperature( ° C) 1.3 1 Rev 3 Prepared by：Jaine Tsai IR333C/ =20mA F 100 120 Page ...
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... Prepared date：07-20-2005 IR333C/H2 Failure Ac/Re Judgement Criteria 0/1 ≧ U × 0 ≦ L × 0.8 ≧ U × 0/1 U ： Upper Specification Limit 0/1 L ： ...
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... Prepared date：07-20-2005 CPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number MADE IN TAIWAN: Production Place Tel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\www.everlight.com Rev 3 Prepared by：Jaine Tsai IR333C/H2 Page ...