DG403DY-T1-E3 Vishay, DG403DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: DG403DY-T1-E3
• Description: IC SWITCH DUAL SPST 16SOIC
• Manufacturer: Vishay
• Type: Analog Switchr

Specifications of DG403DY-T1-E3

• Function: Switch
• Circuit: 2 x SPST - NO
• On-state Resistance: 55 Ohm
• Current - Supply: 5µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Number Of Switches: Dual
• Switch Configuration: SPDT
• On Resistance (max): 45 Ohms
• On Time (max): 150 ns
• Off Time (max): 100 ns
• Off Isolation (typ): 72 dB
• Supply Voltage (max): 25 V
• Supply Current: 0.00001 mA
• Maximum Power Dissipation: 600 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Off State Leakage Current (max): 5 nA
• Analog Switch Type: SPDT
• No. Of Channels: 2
• On State Resistance Max: 30ohm
• Turn Off Time: 30ns
• Turn On Time: 75ns
• Supply Voltage Range: ± 15V
• Operating Temperature Range: -40°C To +85°C
• Package: 16SOIC N
• Maximum On Resistance: 55@±13.5V Ohm
• Maximum High Level Output Current: 100 mA
• Number Of Channels Per Chip: 2
• Maximum Turn-off Time: 100@±15V ns
• Maximum Turn-on Time: 150@±15V ns
• Switch Architecture: SPDT
• Power Supply Type: Single|Dual
• Multiplexer Configuration: Dual SPDT
• Number Of Inputs: 4
• Number Of Outputs: 4
• Number Of Channels: 2
• Analog Switch On Resistance: 45@±13.5VOhm
• Package Type: SOIC N
• Power Supply Requirement: Single/Dual
• Single Supply Voltage (min): 13V
• Single Supply Voltage (typ): 15/18/24/28V
• Single Supply Voltage (max): 36V
• Dual Supply Voltage (min): ±7V
• Dual Supply Voltage (typ): ±9/±12/±15/±18V
• Dual Supply Voltage (max): ±22V
• Power Dissipation: 600mW
• Mounting: Surface Mount
• Pin Count: 16
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DG403DY-T1-E3TR

DG401, DG403, DG405
Vishay Siliconix
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Δ Drain-Source
On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
Input Current V
Input Current V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay (DG403)
Charge Injection
Off Isolation Reject Ratio
Channel-to-Channel Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
IN
= input voltage to perform proper function.
IN
IN
Low
High
e
a
C
V
ΔR
Symbol
R
D
ANALOG
C
C
OIRR
X
I
I
I
I
, C
DS(on)
t
S(off)
D(off)
D(on)
t
GND
OFF
DS(on)
TALK
S(off)
D(off)
I
I
ON
t
I+
Q
I
I-
IH
IL
D
L
S(on)
I
V
S
V
D
I
V+ = 13.5 V, V- = - 13.5 V
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
S
L
= - 10 mA, V
R
R
=
V
R
V
V
V+ = 15 V, V- = - 15 V
= 5 V, V
= - 10 mA, V
L
L
f = 1 MHz, V
V
gen
IN
IN
L
±
Unless Specified
Test Conditions
= 300 Ω, C
= 300 Ω, C
All Other = 2.4 V
All Other = 0.8 V
S
= 100 Ω, C
15.5 V, V
under test = 0.8 V
under test = 2.4 V
V
See Figure 2
= V
= 0 V, R
C
IN
f = 1 MHz
L
D
= 0 or 5 V
IN
= 10 nF
=
= 2.4 V, 0.8 V
D
±
gen
S
D
L
L
=
S
15.5 V
L
=
= 35 pF
= 35 pF
=
±
= 0 V
= 5 pF
= 0 Ω
±
±
5 V, 0 V
15.5 V
10 V
f
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Hot
Hot
Hot
b
- 0.01
- 0.01
- 0.04
0.005
0.005
- 0.01
- 0.01
Typ.
0.01
0.01
30
75
30
35
60
72
90
12
12
39
3
c
S09-2561-Rev. I, 30-Nov-09
Document Number: 70049
- 40 °C to 85 °C
Min.
- 0.5
- 0.5
- 15
- 10
- 5
- 5
- 1
- 1
- 1
- 1
- 5
- 1
- 5
5
D Suffix
d
Max.
150
100
0.5
0.5
15
45
55
10
3
5
5
5
1
1
1
1
5
1
5
d
Unit
nA
µA
pC
dB
µA
ns
pF
Ω
V