MT18VDDT12872AG-40BJ1 Micron Technology Inc, MT18VDDT12872AG-40BJ1 Datasheet - Page 7

• Manufacturer Part Number: MT18VDDT12872AG-40BJ1
• Description: MODULE DDR SDRAM 1GB 184UDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18VDDT12872AG-40BJ1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Features: -
• Package / Case: 184-UDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 7:
PDF: 09005aef80814e61/Source: 09005aef807f8acb
DD18C64_128x72A.fm - Rev. D 9/08 EN
Vdd/VddQ
Vin, Vout
Symbol
Ioz
T
Ii
a
Absolute Maximum Ratings
Parameter
Vdd/VddQ supply voltage relative to Vss
Voltage on any pin relative to Vss
Input leakage current; Any input 0V ≤ Vin ≤ Vdd;
Vref input 0V ≤ Vin ≤ 1.35V (All other pins not under
test = 0V)
Output leakage current; 0V ≤ Vout ≤ VddQ; DQ are
disabled
DRAM ambient operating temperature
Notes:
1. For further information, refer to technical note
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
on Micron’s Web site.
512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM
1
7
Address inputs,
RAS#, CAS#, WE#, BA
S#, CKE
CK, CK#
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal
Electrical Specifications
Min
–1.0
–0.5
–40
–36
–18
–12
–10
©2004 Micron Technology, Inc. All rights reserved
–4
0
Applications,” available
Max
+3.6
+3.2
+18
+12
+10
+70
+85
+36
+4
Units
µA
µA
°C
°C
V
V