MT18HTF25672PDZ-667H1 Micron Technology Inc, MT18HTF25672PDZ-667H1 Datasheet
MT18HTF25672PDZ-667H1
Specifications of MT18HTF25672PDZ-667H1
Related parts for MT18HTF25672PDZ-667H1
MT18HTF25672PDZ-667H1 Summary of contents
Page 1
... DDR2 SDRAM RDIMM MT18HTF12872PDZ – 1GB MT18HTF25672PDZ – 2GB MT18HTF51272PDZ – 4GB Features • 240-pin, registered dual in-line memory module • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB (128 Meg x 72), 2GB (256 Meg x 72), 4GB (512 Meg x 72) • ...
Page 2
... Table 4: Part Numbers and Timing Parameters – 2GB 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module 2 Part Number Density MT18HTF25672PDZ-80E__ MT18HTF25672PTZ-80E__ MT18HTF25672PDZ-800__ MT18HTF25672PTZ-800__ MT18HTF25672PDZ-667__ MT18HTF25672PTZ-667__ Table 5: Part Numbers and Timing Parameters – 4GB 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module 2 Part Number Density MT18HTF51272PDZ-80E__ MT18HTF51272PTZ-80E__ ...
Page 3
... Data sheets for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18HTF25672PDZ-667H1. PDF: 09005aef83d3d893 htf18c128_256_512x72pdz.pdf - Rev. D 11/10 EN ...
Page 4
Pin Assignments Table 6: Pin Assignments 240-Pin RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF DQ0 ...
Page 5
Table 6: Pin Assignments (Continued) 240-Pin RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 30 DQ18 PDF: 09005aef83d3d893 htf18c128_256_512x72pdz.pdf - Rev. D 11/10 EN 1GB, 2GB, 4GB ...
Page 6
... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...
Page 7
Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef83d3d893 ...
Page 8
Functional Block Diagram Figure 2: Functional Block Diagram RS1# RS0# DQS0 DQS0# DM0/DQS9 NF/DQS9# DM/ RDQS DQ DQ0 DQ1 DQ DQ DQ2 DQ3 DQ DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQS1 DQS1# DM1/DQS10 NF/DQS10# DM/ RDQS DQ8 DQ ...
Page 9
... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...
Page 10
Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in each device's data ...
Page 11
... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...
Page 12
I Specifications DD Table 10: DDR2 I Specifications and Conditions – 1GB, Die Revision G DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter ...
Page 13
Table 10: DDR2 I Specifications and Conditions – 1GB, Die Revision G (Continued) DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating bank ...
Page 14
Table 11: DDR2 I Specifications and Conditions – 2GB, Die Revision H (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating ...
Page 15
Table 12: DDR2 I Specifications and Conditions – 4GB, Die Revision C (Continued) DD Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com- ponent data sheet Parameter Active ...
Page 16
Register and PLL Specifications Table 13: Register Specifications SSTU32866 devices or equivalent Parameter Symbol DC high-level V Control, command, IH(DC) input voltage DC low-level V Control, command, IL(DC) input voltage AC high-level V Control, command, IH(AC) input voltage AC low-level ...
Page 17
Table 14: PLL Specifications CU877 device or equivalent Parameter Symbol DC high-level V IH input voltage DC low-level V IL input voltage Input voltage (limits high-level V IH input voltage DC low-level V IL input voltage Input ...
Page 18
Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 16: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...
Page 19
Module Dimensions Figure 3: 240-Pin DDR2 RDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.0 (0.039) 1.0 (0.039) TYP 45° (4X) U13 U14 Pin 240 3.04 (0.1197) TYP 55.0 ...