MT4LSDT1664HY-133D1 Micron Technology Inc, MT4LSDT1664HY-133D1 Datasheet - Page 17

• Manufacturer Part Number: MT4LSDT1664HY-133D1
• Description: MODULE SDRAM 128MB 144SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT4LSDT1664HY-133D1

• Memory Type: SDRAM
• Memory Size: 128MB
• Speed: 133MHz
• Features: -
• Package / Case: 144-SODIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 13:
PDF: 09005aef8078bc7c/Source: 09005aef8078bcd3
SD4C4_8_16X64AG.fm - Rev. D 1/07 EN
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current: Any input 0V ≤ V
(all other pins not under test = 0V)
Output leakage current: DQs are disabled;
0V ≤ V
Output levels: Output high voltage (I
Output low voltage: (I
OUT
≤ V
DD
DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 20; V
Q
OUT
= 4mA)
OUT
IN
= –4mA)
≤ V
32MB, 64MB, 128MB (x64, SR) 168-Pin SDRAM UDIMM
DD
DD
, V
V
17
DD
Symbol
DD
V
V
Q = +3.3V ±0.3V
V
I
,
V
OZ
OH
I
OL
V
IH
IL
I
DD
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–0.3
–20
–10
2.4
–5
–5
3
2
–
V
DD
Max
3.6
0.8
0.4
20
10
Electrical Specifications
5
5
–
+ 0.3
©2002 Micron Technology, Inc. All rights reserved.
Units
µA
µA
V
V
V
V
V
Notes
22
22
33
33