MT46V64M8P-5B:J Micron Technology Inc, MT46V64M8P-5B:J Datasheet - Page 36

• Manufacturer Part Number: MT46V64M8P-5B:J
• Description: IC SDRAM 512MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V64M8P-5B:J

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 25:
Table 26:
Table 27:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
AC Characteristics
Parameter
Speed
Speed
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
Electrical Characteristics and Recommended AC Operating Conditions (-75) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 37;
0°C ≤ T
Input Slew Rate Derating Values for Addresses and Commands
Note: 15 applies to the entire table; Notes appear on page 37;
0°C ≤ T
Input Slew Rate Derating Values for DQ, DQS, and DM
Note: 32 applies to the entire table; Notes appear on page 37;
0°C ≤ T
A
A
A
≤ +70°C; V
≤ +70°C; V
≤ +70°C; V
Slew Rate
Slew Rate
0.500 V/ns
0.400 V/ns
0.300 V/ns
0.500 V/ns
0.400 V/ns
0.300 V/ns
DD
DD
DD
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
DD
DD
DD
= +2.5V ±0.2V
= +2.5V ±0.2V
= +2.5V ±0.2V
1.00
1.05
1.10
0.50
0.55
0.60
t
t
36
DS
IS
Symbol
t
t
t
XSNR
XSRD
WTR
n/a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Min
200
75
1
t
QH -
0.50
0.55
0.60
t
t
DH
IH
-75
1
1
1
t
DQSQ
Max
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
t
t
CK
ns
CK
ns
Units
Units
ns
ns
ns
ns
ns
ns
Notes
26