MT48H8M16LFB4-8:J Micron Technology Inc, MT48H8M16LFB4-8:J Datasheet - Page 41

• Manufacturer Part Number: MT48H8M16LFB4-8:J
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT48H8M16LFB4-8:J

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Burst Length
Burst Type
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Read and write accesses to the device are burst oriented, and the burst length (BL) is
programmable. The burst length determines the maximum number of column loca-
tions that can be accessed for a given READ or WRITE command. Burst lengths of 1, 2,
4, 8, or continuous locations are available for both the sequential and the interleaved
burst types, and a continuous page burst is available for the sequential type. The contin-
uous page burst is used in conjunction with the BURST TERMINATE command to
generate arbitrary burst lengths.
Reserved states should not be used, as unknown operation or incompatibility with fu-
ture versions may result.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst wraps within the block when a boundary is reached. The block
is uniquely selected by A[8:1] when BL = 2, A[8:2] when BL = 4, and A[8:3] when BL = 8.
The remaining (least significant) address bit(s) is (are) used to select the starting loca-
tion within the block. Continuous page bursts wrap within the page when the boundary
is reached.
Accesses within a given burst can be programmed to be either sequential or interleaved;
this is referred to as the burst type and is selected via bit M3.
The ordering of accesses within a burst is determined by the burst length, the burst
type, and the starting column address.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
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